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STGD4H60DF 数据表(PDF) 3 Page - STMicroelectronics |
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STGD4H60DF 数据表(HTML) 3 Page - STMicroelectronics |
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3 / 18 page ![]() 2 Electrical characteristics TC = 25 °C unless otherwise specified. Table 3. Static Symbol Parameter Test conditions Min. Typ. Max. Unit V(BR)CES Collector-emitter breakdown voltage VGE = 0 V, IC = 2 mA 600 V VCE(sat) Collector-emitter saturation voltage VGE = 15 V, IC= 1 A 1.1 V VGE = 15 V, IC= 3 A 1.5 1.95 VGE = 15 V, IC = 3 A, TJ = 125 °C 1.6 VGE = 15 V, IC = 3 A, TJ = 175 °C 1.7 VGE = 15 V, IC = 4 A 1.6 VGE(th) Gate threshold voltage VCE = VGE, IC = 250 μA 5 6 7 V ICES Collector cut-off current VCE = 600 V , VGE = 0 V 25 μA IGES Gate-emitter leakage current VGE = ±20 V , VCE = 0 V ±250 nA Table 4. Dynamic Symbol Parameter Test conditions Min. Typ. Max. Unit Cies Input capacitance VCE = 25 V, f = 1 MHz, VGE = 0 V - 461 - pF Coes Output capacitance 20 Cres Reverse transfer capacitance 9 Qg Total gate charge VCC = 480 V, IC = 3 A, VGE = 0 to 15 V (see Figure 27. Gate charge test circuit) - 35 - nC Qge Gate-emitter charge 6 Qgc Gate-collector charge 17 Table 5. Switching characteristics (inductive load) Symbol Parameter Test conditions Min. Typ. Max. Unit td(on) Turn-on delay time VCE = 400 V, IC = 3 A, RG = 47 Ω, VGE = 15 V (see Figure 26. Test circuit for inductive load switching and Figure 28. Switching waveform) - 35 - ns tr Current rise time 25 td(off) Turn-off delay time 121 tf Current fall time 111 td(on) Turn-on delay time VCE = 400 V, IC = 3 A, RG = 47 Ω, VGE = 15 V, TJ = 175 °C (see Figure 26. Test circuit for inductive load switching and Figure 28. Switching waveform) - 22 - ns tr Current rise time 30 td(off) Turn-off delay time 170 tf Current fall time 180 tsc Short-circuit withstand time VCC ≤ 360 V, VGE = 15 V, RG = 47 Ω 3 - - μs STGD4H60DF Electrical characteristics DS13901 - Rev 2 page 3/18 |
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