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STGD4H60DF 数据表(PDF) 2 Page - STMicroelectronics

部件名 STGD4H60DF
功能描述  Trench gate field-stop 600 V, 4 A high speed H series IGBT in a DPAK package
PDF  18 Pages
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制造商  STMICROELECTRONICS [STMicroelectronics]
网页  http://www.st.com
标志 STMICROELECTRONICS - STMicroelectronics

STGD4H60DF 数据表(HTML) 2 Page - STMicroelectronics

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1
Electrical ratings
Table 1. Absolute maximum ratings
Symbol
Parameter
Value
Unit
VCES
Collector-emitter voltage (VGE = 0)
600
V
IC
Continuous collector current at TC = 25 °C
8
A
Continuous collector current at TC = 100 °C
4
ICP(1)
Pulsed collector current
16
A
VGE
Gate-emitter voltage
±20
V
IF
Continuous forward current TC = 25 °C
8
A
Continuous forward current at TC = 100 °C
4
IFP(1)
Pulsed forward current
16
A
PTOT
Total power dissipation at TC = 25 °C
75
W
TSTG
Storage temperature range
-55 to 150
°C
TJ
Operating junction temperature range
-55 to 175
1. Pulse width limited by maximum junction temperature.
Table 2. Thermal data
Symbol
Parameter
Value
Unit
RthJC
Thermal resistance, junction-to-case, IGBT
2
°C/W
RthJC
Thermal resistance, junction-to-case, diode
4.5
°C/W
RthJA
Thermal resistance, junction-to-ambient
100
°C/W
STGD4H60DF
Electrical ratings
DS13901 - Rev 2
page 2/18



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