STGD4H60DF datasheet(4/18 Pages) STMICROELECTRONICS

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Table 6. Switching energy (inductive load)

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

Eon(1)

Turn-on switching energy

VCE = 400 V, IC = 3 A,

RG = 47 Ω, VGE = 15 V

μJ

Eoff (2)

Turn-off switching energy

Ets

Total switching energy

113

Eon(1)

Turn-on switching energy

VCE = 400 V, IC = 3 A,

RG = 47 Ω, VGE = 15 V, TJ = 175 °C

105

Eoff(2)

Turn-off switching energy

Ets

Total switching energy

197

1. Including the reverse recovery of the diode.

2. Including the tail of the collector current.

Table 7. Collector-emitter diode

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

Forward on-voltage

IF = 1 A

1.3

IF = 3 A

1.75

IF = 3 A, TJ = 175 °C

1.3

IF = 4 A

1.85

trr

Reverse recovery time

VCC = 400 V; IF = 3 A;

diF/dt = 160 A / μs

Qrr

Reverse recovery charge

Irrm

Reverse recovery current

2.3

Err

Reverse recovery energy

9.9

μJ

trr

Reverse recovery time

VCC = 400 V; IF = 3 A;

diF/dt = 160 A / μs, TJ = 175 °C

118

Qrr

Reverse recovery charge

206

Irrm

Reverse recovery current

3.9

Err

Reverse recovery energy

μJ

STGD4H60DF

Electrical characteristics

DS13901 - Rev 2

page 4/18

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