Figure 13. Gate charge vs. gate-emitter voltage

GADG170120221011GCGE

15

12

9

6

3

0

0

10

20

30

VGE

(V)

Qg (nC)

VCC = 480 V, IC = 3 A, IG = 5 mA

Figure 14. Switching energy vs collector current

GADG170120221011SLC

0.24

0.18

0.12

0.06

0.00

0

3

6

E

(mJ)

IC (A)

Eon

Eoff

VGE = 15 V, TJ= 175

℃

Figure 15. Switching energy vs gate resistance

GADG170120221013SLG

0.17

0.14

0.11

0.08

0

100

200

300

E

(mJ)

RG (Ω)

Eon

Eoff

IC = 3 A VCC = 400 V

VGE = 15 V, TJ= 175

℃

Figure 16. Switching energy vs temperature

GADG170120221012SLT

0.10

0.08

0.06

0.04

0.02

0

50

100

150

E

(mJ)

TJ (°C)

Eon

Eoff

IC = 3 A,

VGE = 15 V

Figure 17. Switching energy vs collector-emitter voltage

GADG170120221012SLV

0.12

0.10

0.08

0.06

250

350

450

E

(mJ)

VCE (V)

Eon

Eoff

IC = 3 A

VGE = 15 V, TJ= 175

℃

Figure 18. Switching times vs collector current

GADG170120221014STC

10 2

10 1

0

3

6

t

(ns)

IC (A)

tr

td(off)

tf

td(on)

VGE = 15 V, TJ= 175

℃

STGD4H60DF

Electrical characteristics (curves)

DS13901 - Rev 2

page 7/18