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ADRF5022BCCZN-R7 数据表(PDF) 1 Page - Analog Devices |
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ADRF5022BCCZN-R7 数据表(HTML) 1 Page - Analog Devices |
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1 / 12 page ![]() Data Sheet ADRF5022 Silicon SPDT Switch, Nonreflective, 100 MHz to 45 GHz Rev. 0 DOCUMENT FEEDBACK TECHNICAL SUPPORT Information furnished by Analog Devices is believed to be accurate and reliable "as is". However, no responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other rights of third parties that may result from its use. Specifications subject to change without notice. No license is granted by implication or otherwise under any patent or patent rights of Analog Devices. Trademarks and registered trademarks are the property of their respective owners. FEATURES ► Ultra-wideband frequency range: 100 MHz to 45 GHz ► Nonreflective design ► Low insertion loss ► 1.2 dB typical to 18 GHz ► 1.9 dB typical to 40 GHz ► 2.3 dB typical to 45 GHz ► High Isolation: 43 dB typical to 45 GHz ► High input linearity ► 0.1 dB power compression (P0.1dB): 31 dBm ► Third-order intercept (IP3): 55 dBm ► High power handling at TCASE = 85°C ► 30 dBm through path ► 24 dBm terminated path ► 30 dBm hot switching (RFC port) ► RF settling time (0.1 dB final RF output): 30 ns ► No low-frequency spurious signals ► All off-state control ► Positive control interface: CMOS-/LVTTL-compatible ► 20-terminal, 3.0 mm × 3.0 mm LGA package ► Pin-compatible with ADRF5023, low-frequency cutoff version APPLICATIONS ► Test and instrumentation ► Cellular infrastructure: 5G millimeter wave ► Military radios, radars, and electronic countermeasures (ECMs) ► Microwave radios and very small aperture terminals (VSATs) ► Industrial scanners FUNCTIONAL BLOCK DIAGRAM Figure 1. Functional Block Diagram GENERAL DESCRIPTION The ADRF5022 is a nonreflective, single-pole double-throw (SPDT) switch manufactured in the silicon process. The ADRF5022 operates from 100 MHz to 45 GHz with a typical insertion loss of 2.3 dB and isolation of 43 dB. The device has an RF input-power handling capability of 30 dBm for the through path, 24 dBm for the terminated path, and 30 dBm for the hot switching at the RF common port. The ADRF5022 requires a positive supply of +3.3 V and a negative supply of −3.3 V. The device employs complementary metal-oxide semiconductor (CMOS)-/low-voltage transistor to transistor logic (LVTTL)-compatible controls. The ADRF5022 can also operate with a single positive supply voltage (VDD) applied while the negative supply voltage (VSS) is connected to ground. In this operating condition, the small signal performance is maintained while the switching characteristics, line- arity, and power handling performance is derated. For more details, see Table 2. TheADRF5022 is pin-compatible with the ADRF5023, low-frequen- cy cutoff version, which operates from 9 kHz to 45 GHz. The ADRF5022 comes in a 20-terminal, 3.0 mm × 3.0 mm, RoHS- compliant, land grid array (LGA) package and can operate from −40°C to +105°C. |
类似零件编号 - ADRF5022BCCZN-R7 |
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类似说明 - ADRF5022BCCZN-R7 |
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