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ADRF5022BCCZN-R7 数据表(PDF) 1 Page - Analog Devices

部件名 ADRF5022BCCZN-R7
功能描述  Silicon SPDT Switch, Nonreflective, 100 MHz to 45 GHz
PDF  12 Pages
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制造商  AD [Analog Devices]
网页  http://www.analog.com
标志 AD - Analog Devices

ADRF5022BCCZN-R7 数据表(HTML) 1 Page - Analog Devices

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Data Sheet
ADRF5022
Silicon SPDT Switch, Nonreflective, 100 MHz to 45 GHz
Rev. 0
DOCUMENT FEEDBACK
TECHNICAL SUPPORT
Information furnished by Analog Devices is believed to be accurate and reliable "as is". However, no responsibility is assumed by Analog
Devices for its use, nor for any infringements of patents or other rights of third parties that may result from its use. Specifications subject to
change without notice. No license is granted by implication or otherwise under any patent or patent rights of Analog Devices. Trademarks and
registered trademarks are the property of their respective owners.
FEATURES
Ultra-wideband frequency range: 100 MHz to 45 GHz
Nonreflective design
Low insertion loss
1.2 dB typical to 18 GHz
1.9 dB typical to 40 GHz
2.3 dB typical to 45 GHz
High Isolation: 43 dB typical to 45 GHz
High input linearity
0.1 dB power compression (P0.1dB): 31 dBm
Third-order intercept (IP3): 55 dBm
High power handling at TCASE = 85°C
30 dBm through path
24 dBm terminated path
30 dBm hot switching (RFC port)
RF settling time (0.1 dB final RF output): 30 ns
No low-frequency spurious signals
All off-state control
Positive control interface: CMOS-/LVTTL-compatible
20-terminal, 3.0 mm × 3.0 mm LGA package
Pin-compatible with ADRF5023, low-frequency cutoff version
APPLICATIONS
Test and instrumentation
Cellular infrastructure: 5G millimeter wave
Military radios, radars, and electronic countermeasures (ECMs)
Microwave radios and very small aperture terminals (VSATs)
Industrial scanners
FUNCTIONAL BLOCK DIAGRAM
Figure 1. Functional Block Diagram
GENERAL DESCRIPTION
The ADRF5022 is a nonreflective, single-pole double-throw (SPDT)
switch manufactured in the silicon process.
The ADRF5022 operates from 100 MHz to 45 GHz with a typical
insertion loss of 2.3 dB and isolation of 43 dB. The device has an
RF input-power handling capability of 30 dBm for the through path,
24 dBm for the terminated path, and 30 dBm for the hot switching at
the RF common port.
The ADRF5022 requires a positive supply of +3.3 V and a negative
supply of −3.3 V. The device employs complementary metal-oxide
semiconductor (CMOS)-/low-voltage transistor to transistor logic
(LVTTL)-compatible controls.
The ADRF5022 can also operate with a single positive supply
voltage (VDD) applied while the negative supply voltage (VSS) is
connected to ground. In this operating condition, the small signal
performance is maintained while the switching characteristics, line-
arity, and power handling performance is derated. For more details,
see Table 2.
TheADRF5022 is pin-compatible with the ADRF5023, low-frequen-
cy cutoff version, which operates from 9 kHz to 45 GHz.
The ADRF5022 comes in a 20-terminal, 3.0 mm × 3.0 mm, RoHS-
compliant, land grid array (LGA) package and can operate from
−40°C to +105°C.


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