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ISP1122ABD 数据表(PDF) 25 Page - NXP Semiconductors |
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ISP1122ABD 数据表(HTML) 25 Page - NXP Semiconductors |
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25 / 48 page ![]() Philips Semiconductors ISP1122A USB stand-alone hub Preliminary specification Rev. 01 — 27 March 2000 25 of 48 9397 750 06986 © Philips Electronics N.V. 2000. All rights reserved. The ISP1122A overcurrent detection circuit has been designed with a nominal trip voltage ( ∆V trip) of 85 mV. This gives a typical trip current of approximately 850 mA for a power switch with an on-resistance of 100 m Ω1. 12.3 Tuning the overcurrent trip voltage The ISP1122A trip voltage can optionally be adjusted through external components to set the desired trip current. This is done by inserting tuning resistors at pins SP/BP or OCn (see Figure 9). Rtu tunes up the trip voltage ∆Vtrip and Rtd tunes it down according to Equation 1. (1) with Iref(nom) =5 µA and IOC(nom) = 0.5 µA. 12.4 Reference circuits Some typical examples of port power switching and overcurrent detection modes are given in Figure 10 to Figure 13. The RC circuit (47 k Ω and 0.1 µF) around the PMOS switch provides for soft turn-on. The series resistor connecting the SP/BP pin to VCC tunes up the overcurrent trip voltage slightly (see Figure 9). In the schematic diagram the resistor separates the net names for pins VCC and SP/BP. This allows an automatic router to use a wide trace for VCC and a narrow trace to connect pin SP/BP. 1. The following PMOS power switches have been tested to work well with the ISP1122A: Philips PHP109, Vishay Siliconix Si2301DS, Fairchild FDN338P. ∆V trip ∆V trip intrinsic () I ref R tu ⋅ I OC R td ⋅ – + = Iref(nom) =5 µA IOC(nom) = 0.5 µA IOC(nom) = 0.5 µA a. Self-powered mode. b. Bus-powered mode. Fig 9. Tuning the overcurrent trip voltage. handbook, halfpage MBL167 VCC Iref Rtu Rtd low-ohmic PMOS switch VCC SP/BP ISP1122A OCn IOC handbook, halfpage MBL168 VBUS Rtd low-ohmic PMOS switch VCC SP/BP ISP1122A OCn IOC |
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