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ADVANCE INFORMATION

This document contains information on a product under development at Advanced Micro Devices. The information

is intended to help you evaluate this product. AMD reserves the right to change or discontinue work on this proposed

product without notice.

Publication# 30536

Rev: A Amendment +3

Issue Date: November 25, 2003

Refer to AMD’s Website (www.amd.com) for the latest information.

Am70PDL127BDH/Am70PDL129BDH

Stacked Multi-Chip Package (MCP/XIP) Flash Memory,

Data storage MirrorBit Flash, and pSRAM (XIP)

2 x 64 Megabit (8 M x 16-Bit) CMOS 3.0 Volt-Only Page Mode Flash Memory Data Storage

128 Megabit (8 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory and

32 Mbit (2 M x 16-Bit) CMOS Pseudo Static RAM with Page Mode

DISTINCTIVE CHARACTERISTICS

MCP Features

■ Consists of Am29PDL127H/Am29PDL129H, 32 Mb

pSRAM and two Am29LV640M.

■ Power supply voltage of 2.7 to 3.3 volt

■ High performance (XIP)

— Access time as fast as 65 ns initial / 25 ns page

■ High performance (Data Storage)

— Access time as fast as 110 ns initial / 30 ns page

■ Package

— 93-Ball FBGA

■ Operating Temperature

— –40°C to +85°C

Flash Memory Features (XIP)

AM29PDL127H/AM29PDL129H

ARCHITECTURAL ADVANTAGES

■ 128 Mbit Page Mode device

— Page size of 8 words: Fast page read access from random

locations within the page

■ Dual Chip Enable inputs (PDL129 only)

— Two CE# inputs control selection of each half of the memory

space

■ Single power supply operation

— Full Voltage range: 2.7 to 3.3 volt read, erase, and program

operations for battery-powered applications

■ Simultaneous Read/Write Operation

— Data can be continuously read from one bank while

executing erase/program functions in another bank

— Zero latency switching from write to read operations

■ FlexBank Architecture

— 4 separate banks, with up to two simultaneous operations

per device

PDL127:

— Bank A: 16 Mbit (4 Kw x 8 and 32 Kw x 31)

— Bank B: 48 Mbit (32 Kw x 96)

— Bank C: 48 Mbit (32 Kw x 96)

— Bank D: 16 Mbit (4 Kw x 8 and 32 Kw x 31)

PDL129:

— Bank 1A: 48 Mbit (32 Kw x 96)

— Bank 1B: 16 Mbit (4 Kw x 8 and 32 Kw x 31)

— Bank 2A: 16 Mbit (4 Kw x 8 and 32 Kw x 31)

— Bank 2B: 48 Mbit (32 Kw x 96)

■ SecSiTM (Secured Silicon) Sector region

— Up to 128 words accessible through a command sequence

— Up to 64 factory-locked words

— Up to 64 customer-lockable words

■ Both top and bottom boot blocks in one device

■ Manufactured on 0.13 µm process technology

■ 20-year data retention at 125°C

■ Minimum 1 million erase cycle guarantee per sector

PERFORMANCE CHARACTERISTICS

■ High Performance

— Page access times as fast as 25 ns

— Random access times as fast as 65 ns

■ Power consumption (typical values at 10 MHz)

— 45 mA active read current

— 25 mA program/erase current

— 1 µA typical standby mode current

SOFTWARE FEATURES

■ Software command-set compatible with JEDEC 42.4

standard

— Backward compatible with Am29F and Am29LV families

■ CFI (Common Flash Interface) complaint

— Provides device-specific information to the system, allowing

host software to easily reconfigure for different Flash devices

■ Erase Suspend / Erase Resume

— Suspends an erase operation to allow read or program

operations in other sectors of same bank

■ Unlock Bypass Program command

— Reduces overall programming time when issuing multiple

program command sequences

HARDWARE FEATURES

■ Ready/Busy# pin (RY/BY#)

— Provides a hardware method of detecting program or erase

cycle completion

■ Hardware reset pin (RESET#)

— Hardware method to reset the device to reading array data

■ WP#/ACC (Write Protect/Acceleration) input

—At V

IL, hardware level protection for the first and last two 4K

word sectors.

—At V

IH, allows removal of sector protection

—At V

HH, provides accelerated programming in a factory

setting

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