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M700000002 数据表(PDF) 103 Page - SPANSION

部件名 M700000002
功能描述  2 x 64 Megabit (8 M x 16-Bit) CMOS 3.0 Volt-Only Page Mode Flash Memory Data Storage 128 Megabit (8 M x 16-Bit) CMOS
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M700000002 数据表(HTML) 103 Page - SPANSION

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November 25, 2003
Am70PDL127BDH/Am70PDL129BDH
101
AD VAN C E
INFORM ATION
Command Definitions
Table 9.
Command Definitions (x16 Mode)
Legend:
X = Don’t care
RA = Read Address of memory location to be read.
RD = Read Data read from location RA during read operation.
PA = Program Address. Addresses latch on falling edge of WE# or CE#
pulse, whichever happens later.
PD = Program Data for location PA. Data latches on rising edge of WE#
or CE# pulse, whichever happens first.
SA = Sector Address of sector to be verified (in autoselect mode) or
erased. Address bits A21–A15 uniquely select any sector.
WBL = Write Buffer Location. Address must be within same write buffer
page as PA.
WC = Word Count. Number of write buffer locations to load minus 1.
Notes:
1.
See Table 1 for description of bus operations.
2.
All values are in hexadecimal.
3.
Shaded cells indicate read cycles. All others are write cycles.
4.
During unlock and command cycles, when lower address bits are
555 or 2AA as shown in table, address bits above A11 and data
bits above DQ7 are don’t care.
5.
No unlock or command cycles required when device is in read
mode.
6.
Reset command is required to return to read mode (or to
erase-suspend-read mode if previously in Erase Suspend) when
device is in autoselect mode, or if DQ5 goes high while device is
providing status information.
7.
Fourth cycle of the autoselect command sequence is a read
cycle. Data bits DQ15–DQ8 are don’t care. Except for RD, PD
and WC. See Autoselect Command Sequence section for more
information.
8.
Device ID must be read in three cycles.
9.
WP# protects highest address sector, data is 98h for factory
locked and 18h for not factory locked. Data is 00h for an
unprotected sector group and 01h for a protected sector group.
10. Total number of cycles in command sequence is determined by
number of words written to write buffer. Maximum number of
cycles in command sequence is 21.
11. Command sequence resets device for next command after
aborted write-to-buffer operation.
12. Unlock Bypass command is required prior to Unlock Bypass
Program command.
13. Unlock Bypass Reset command is required to return to read
mode when device is in unlock bypass mode.
14. System may read and program in non-erasing sectors, or enter
autoselect mode, when in Erase Suspend mode. Erase Suspend
command is valid only during a sector erase operation.
15. Erase Resume command is valid only during Erase Suspend
mode.
16. Command is valid when device is ready to read array data or when
device is in autoselect mode.
Command
Sequence
(Note 1)
Bus Cycles (Notes 2–5)
First
Second
Third
Fourth
Fifth
Sixth
Addr
Data
Addr
Data
Addr
Data
Addr
Data
Addr
Data
Addr
Data
Read (Note 5)
1
RA
RD
Reset (Note 6)
1
XXX
F0
Manufacturer ID
4
555
AA
2AA
55
555
90
X00
0001
Device ID (Note 8)
6
555
AA
2AA
55
555
90
X01
227E
X0E
220C
X0F
2201
SecSi
™ Sector Factory Protect
(Note 9)
4
555
AA
2AA
55
555
90
X03
(Note 10)
Sector Group Protect Verify
(Note 10)
4
555
AA
2AA
55
555
90
(SA)X02
00/01
Enter SecSi Sector Region
3
555
AA
2AA
55
555
88
Exit SecSi Sector Region
4
555
AA
2AA
55
555
90
XXX
00
Program
4
555
AA
2AA
55
555
A0
PA
PD
Write to Buffer (Note 11)
6
555
AA
2AA
55
SA
25
SA
WC
PA
PD
WBL
PD
Program Buffer to Flash
1
SA
29
Write to Buffer Abort Reset (Note 12)
3
555
AA
2AA
55
555
F0
Unlock Bypass
3
555
AA
2AA
55
555
20
Unlock Bypass Program (Note 13)
2
XXX
A0
PA
PD
Unlock Bypass Reset (Note 14)
2
XXX
90
XXX
00
Chip Erase
6
555
AA
2AA
55
555
80
555
AA
2AA
55
555
10
Sector Erase
6
555
AA
2AA
55
555
80
555
AA
2AA
55
SA
30
Program/Erase Suspend (Note 15)
1
BA
B0
Program/Erase Resume (Note 16)
1
BA
30
CFI Query (Note 17)
1
55
98



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