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24CSM01-E/P 数据表(PDF) 6 Page - Microchip Technology |
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24CSM01-E/P 数据表(HTML) 6 Page - Microchip Technology |
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6 / 63 page ![]() 24CSM01 DS20006781B -page 6 Preliminary 2023 Microchip Technology Inc. and its subsidiaries FIGURE 1-1: BUS TIMING DATA TABLE 1-3: EEPROM CELL PERFORMANCE CHARACTERISTICS Operation Test Condition Min. Max. Units Write Endurance(1,2) TA = 25°C, 1.7V VCC 5.5V 1,000,000 — Write Cycles Data Retention(1) TA = 55°C 200 — Years Note 1: Performance is determined through characterization and the qualification process. 2: Due to the memory array architecture, the write cycle endurance is specified for write operations in groups of four data bytes. The beginning of any 4-byte boundaries can be determined by multiplying any integer (N) by four (i.e., 4*N). The end address can be found by adding three to the beginning value (i.e., 4*N+3). See Section 6.3 “Internal Writing Methodology” for further details on this implementation. (unprotected) (protected) SCL SDA In SDA Out WP 5 7 6 15 3 2 89 13 D4 4 10 11 12 14 |
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