141130

© NXP B.V. 2007. All rights reserved.

Product data sheet

Rev. 3.0 — 18 July 2007

3 of 7

NXP Semiconductors

MF1 IC S20 05

Sawn bumped 120µm wafer addendum

4.

Limiting values

[1]

Stresses above one or more of the limiting values may cause permanent damage to the device

[2]

These are stress ratings only. Operation of the device at these or any other conditions above those given in

the Characteristics section of the specification is not implied

[3]

Exposure to limiting values for extended periods may affect device reliability

[4]

MIL Standard 883-C method 3015; Human body model: C = 100 pF, R = 1.5 kW

5.

Characteristics

[1]

Stresses above one or more of the limiting values may cause permanent damage to the device

[2]

These are stress ratings only. Operation of the device at these or any other conditions above those given in

the Characteristics section of the specification is not implied

[3]

Exposure to limiting values for extended periods may affect device reliability

Table 2.

In accordance with the Absolute Maximum Rating System (IEC 134)

Symbol

Parameter

Min

Max

Unit

Input Current

-

30

mA

Total power dissipation per package

-

200

mW

Storage temperature

-55

125

°C

Operating temperature

-25

70

°C

Electrostatic discharge voltage

[4]

2-

kV

Latch-up current

± 100

mA

Table 3.

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

Input frequency

-

13.56

-

MHz

Input capacitance

(LCR meter HP4258)

22

°C, Cp-D,

13.56 MHz, 2 V

14.4

16.1

17.4

pF

EEPROM write time

-

2.9

-

ms

EEPROM data

retention

10

years

EEPROM write

endurance

cycles