TDF8541THSLASHN2 datasheet(33/54 Pages) NXP

33 / 54 page

TDF8541

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Product data sheet

Rev. 3 — 13 December 2011

33 of 54

NXP Semiconductors

TDF8541

I2C-bus controlled 4

 45 W power amplifier

Ioff

off-state current

VSTB = 0.4 V

A

output voltage

DC; amplifier on; high gain/low

gain mode

6.6

7.1

7.6

DC; line driver mode; IB4[D2] = 0;

IB3[D5] = [D6] = 1

3.0

3.4

3.8

VP(low)(mute)

low supply voltage mute

rising supply voltage

IB4[D0] = 1

7.0

7.7

8.1

IB4[D0] = 0

5.4

5.7

6.2

falling supply voltage

IB4[D0] = 1

6.5

7.2

7.7

IB4[D0] = 0

5.2

5.5

5.9

V

P(low)(mute)

low supply voltage mute

hysteresis

IB4[D0] = 1

0.1

0.5

0.8

IB4[D0] = 0

0.1

0.3

0.7

VP(ovp)pwarn

pre-warning overvoltage

protection supply voltage

rising supply voltage

15.2

16.9

falling supply voltage

14.4

15.2

16.2

hysteresis

0.8

Vth(ovp)

overvoltage protection

threshold voltage

rising supply voltage

VPOR

power-on reset voltage

falling supply voltage

3.1

4.5

VO(offset)

output offset voltage

amplifier on

75

+75

amplifier mute

25

+25

line driver mode

45

+45

Mode select and second clip detection: pin STB

VSTB

voltage on pin STB

off mode selected

I2C-bus mode

0.8

legacy mode (I2C-bus mode

off)

0.8

mute selected

legacy mode (I2C-bus mode

off)

2.5

4.5

operating mode selected

I2C-bus mode

2.5

legacy mode (I2C-bus mode

off)

5.9

low voltage on pin STB when

pulled LOW during clipping

[1]

ISTB = 150 A5.6

5.9

6.5

ISTB = 500 A6.1

7.4

ISTB

current on pin STB

0 V < VSTB < 8.5 V; clip detection

not active

[1] -5

A

Table 20.

Characteristics …continued

Refer to test circuit (see Figure 29) at Tamb =25 C; VP = 14.4 V; unless otherwise specified. Tested at Tamb =25 C;

guaranteed for Tj = 40 C to +150 C; functionality is guaranteed for VP < 10 V unless otherwise specified.

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

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