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PIC18F258-E/SP 数据表(PDF) 74 Page - Microchip Technology |
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PIC18F258-E/SP 数据表(HTML) 74 Page - Microchip Technology |
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74 / 402 page  PIC18FXX8 DS41159E-page 72 © 2006 Microchip Technology Inc. EXAMPLE 6-3: WRITING TO FLASH PROGRAM MEMORY MOVLW D'64 ; number of bytes in erase block MOVWF COUNTER MOVLW high (BUFFER_ADDR) ; point to buffer MOVWF FSR0H MOVLW low (BUFFER_ADDR) MOVWF FSR0L MOVLW upper (CODE_ADDR) ; Load TBLPTR with the base MOVWF TBLPTRU ; address of the memory block MOVLW high (CODE_ADDR) MOVWF TBLPTRH MOVLW low (CODE_ADDR) MOVWF TBLPTRL READ_BLOCK TBLRD*+ ; read into TABLAT, and inc MOVF TABLAT, W ; get data MOVWF POSTINC0 ; store data DECFSZ COUNTER ; done? BRA READ_BLOCK ; repeat MODIFY_WORD MOVLW DATA_ADDR_HIGH ; point to buffer MOVWF FSR0H MOVLW DATA_ADDR_LOW MOVWF FSR0L MOVLW NEW_DATA_LOW ; update buffer word MOVWF POSTINC0 MOVLW NEW_DATA_HIGH MOVWF INDF0 ERASE_BLOCK MOVLW upper (CODE_ADDR) ; load TBLPTR with the base MOVWF TBLPTRU ; address of the memory block MOVLW high (CODE_ADDR) MOVWF TBLPTRH MOVLW low (CODE_ADDR) MOVWF TBLPTRL BSF EECON1, EEPGD ; point to FLASH program memory BCF EECON1, CFGS ; access FLASH program memory BSF EECON1, WREN ; enable write to memory BSF EECON1, FREE ; enable Row Erase operation BCF INTCON, GIE ; disable interrupts MOVLW 55h Required MOVWF EECON2 ; write 55H Sequence MOVLW 0AAh MOVWF EECON2 ; write AAH BSF EECON1, WR ; start erase (CPU stall) NOP BSF INTCON, GIE ; re-enable interrupts TBLRD*- ; dummy read decrement WRITE_BUFFER_BACK MOVLW 8 ; number of write buffer groups of 8 bytes MOVWF COUNTER_HI MOVLW high (BUFFER_ADDR) ; point to buffer MOVWF FSR0H MOVLW low (BUFFER_ADDR) MOVWF FSR0L PROGRAM_LOOP MOVLW 8 ; number of bytes in holding register MOVWF COUNTER WRITE_WORD_TO_HREGS MOVFW POSTINC0, W ; get low byte of buffer data MOVWF TABLAT ; present data to table latch TBLWT+* ; write data, perform a short write ; to internal TBLWT holding register. DECFSZ COUNTER ; loop until buffers are full BRA WRITE_WORD_TO_HREGS |
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