5 Specifications

5.1 Absolute Maximum Ratings

Over operating free-air temperature range (unless otherwise noted)(1)

MIN

MAX

UNIT

VDD, VDD_A

Power supply voltage

–0.3

3.6

V

VIN

IO input voltage

GND

VDD + 0.5

V

TJ

Junction temperature

125

°C

Tstg

Storage temperature

–65

150

°C

(1)

Stresses beyond those listed under Absolute Maximum Rating may cause permanent damage to the device. These are stress

ratings only, which do not imply functional operation of the device at these or any other conditions beyond those indicated

under Recommended Operating Condition. Exposure to absolute-maximum-rated conditions for extended periods may affect device

reliability.

5.2 ESD Ratings

VALUE

UNIT

V(ESD)

Electrostatic discharge

Human body model (HBM), per ANSI/ESDA/JEDEC

JS-001, all pins(1)

±3000

V

Charged device model (CDM), per JEDEC

specification JESD22-C101, all pins(2)

±1000

(1)

JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process.

(2)

JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process.

5.3 Recommended Operating Conditions

Over operating free-air temperature range (unless otherwise noted)

MIN

NOM

MAX

UNIT

VDD

IO supply voltage

3.135

3.3

3.465

V

VDD_A

Core supply voltage

3.135

3.3

3.465

V

TA

Ambient temperature

–40

85

°C

TJ

Junction temperature

125

°C

5.4 Thermal Information

THERMAL METRIC(1)

CDCDB2000

UNIT

NPP (GQFN)

80 PINS

RθJA

Junction-to-ambient thermal resistance

32.7

°C/W

RθJC(top)

Junction-to-case (top) thermal resistance

31.2

°C/W

RθJB

Junction-to-board thermal resistance

15.9

°C/W

ΨJT

Junction-to-top characterization parameter

0.4

°C/W

ΨJB

Junction-to-board characterization parameter

15.8

°C/W

RθJC(bot)

Junction-to-case (bottom) thermal resistance

1.5

°C/W

(1)

For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application

report.

5.5 Electrical Characteristics

VDD, VDD_A = 3.3 V ± 5 %, -40 °C < TA < 85 °C. Typical values are at VDD = VDD_A = 3.3 V, 25 °C (unless otherwise

noted)

PARAMETER

TEST CONDITIONS

MIN

TYP

MAX

UNIT

CURRENT CONSUMPTION

CDCDB2000

SNAS787B – NOVEMBER 2019 – REVISED OCTOBER 2024

www.ti.com

6

Submit Document Feedback

Copyright © 2024 Texas Instruments Incorporated

Product Folder Links: CDCDB2000