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ST10F273 数据表(PDF) 33 Page - STMicroelectronics |
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ST10F273 数据表(HTML) 33 Page - STMicroelectronics |
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33 / 179 page ![]() ST10F273 Internal Flash memory 33/179 5.4.5 Flash data register 0 low The Flash Address Registers (FARH/L) and the Flash Data Registers (FDR1H/L-FDR0H/L) are used during the program operations to store Flash Address in which to program and Data to program. FDR0L (0x0E 0008) FCR Reset value: FFFFh 5.4.6 Flash data register 0 high FDR0H (0x0E 000A) FCR Reset value: FFFFh 15 14 13 12 11 10 9876543210 DIN15 DIN14 DIN13 DIN12 DIN11 DIN10 DIN9 DIN8 DIN7 DIN6 DIN5 DIN4 DIN3 DIN2 DIN1 DIN0 RW RW RW RW RW RW RW RW RW RW RW RW RW RW RW RW Table 12. Flash data register 0 low Bit Function DIN(15:0) Data input 15:0 These bits must be written with the Data to program the Flash with the following operations: Word Program (32-bit), Double Word Program (64-bit) and Set Protection. 15 14 13 12 11 10 9876 543210 DIN31 DIN30 DIN29 DIN28 DIN27 DIN26 DIN25 DIN24 DIN23 DIN22 DIN21 DIN20 DIN19 DIN18 DIN17 DIN16 RW RW RW RW RW RW RW RW RW RW RW RW RW RW RW RW Table 13. Flash data register 0 high Bit Function DIN(31:16) Data input 31:16 These bits must be written with the Data to program the Flash with the following operations: Word Program (32-bit), Double Word Program (64-bit) and Set Protection. |
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