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ST10F273 数据表(PDF) 39 Page - STMicroelectronics |
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ST10F273 数据表(HTML) 39 Page - STMicroelectronics |
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39 / 179 page  ST10F273 Internal Flash memory 39/179 memory as listed in the first column, what is possible and what is not possible to do (see column headers) is shown in the table. 5.5.8 Write protection The Flash modules have one level of Write Protections: Each sector of each bank can be Software Write Protected by programming at 0 the related bit WyPx in FNVWPIRL/H register. 5.5.9 Temporary unprotection Bits WyPx of FNVWPIRL/H can be temporary unprotected by executing the Set Protection operation and writing 1 into these bits. Bit ACCP can be temporary unprotected by executing the Set Protection operation and writing are executed from IFlash. To restore the write access protection bits it is necessary to reset the microcontroller or to execute a Set Protection operation and write 0 into desidered bits. It is not necessary to temporary unprotect the access protected IFlash in order to update the code: it is, in fact, sufficient to execute the updating instructions from another Flash bank. In reality, when a temporary unprotection operation is executed, the corresponding volatile register is written to 1, while the non volatile registers bits previously written to 0 (for a protection set operation), will continue to mantain the 0. For this reason, the user software must be in charge to track the current protection status (for instance using a specific RAM area), it is not possible to deduce it by reading the non volatile register content (a temporary unprotection cannot be detected). Table 24. Summary of access protection level Read IFlash / jump to IFlash Read XRAMS or Ext Mem / Jump to XRAM or Ext Mem Read Flash registers Write Flash registers Fetching from IFlash Yes / Yes Yes / Yes Yes Yes Fetching from IRAM No / Yes Yes / Yes Yes No Fetching from XRAM No / Yes Yes / Yes Yes No Fetching from External memory No / Yes Yes / Yes Yes No |
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