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STV7622 数据表(PDF) 12 Page - STMicroelectronics |
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STV7622 数据表(HTML) 12 Page - STMicroelectronics |
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12 / 32 page ![]() Circuit description STV7622 12/32 5.6 Power output block and EMI control The high-voltage output stage has a totem pole structure (see Figure 3). The capacitive load is charged to Vpp by the high-side N-channel transistor, T1, and discharged to ground by the low-side N-channel transistor, T2. The status of the power outputs can also be controlled by the configuration pins, POC and /BLK, which can set the power outputs either all High or all Low. Several functions, patented by STMicroelectronics, are implemented in the STV7622 to reduce EMI: SmartSlope: The falling edge of the output pulse consist of 2 slopes (Figure 6 below): a smooth slope followed by a steeper one (typically 4 times faster) The duration of the first slope is set by two logic inputs, FS1 and FS2, according to the table in Figure 6. Figure 6. Output falling edge ConstantSlope: The duration of the output rising edge (Figure 7) is kept constant independent of the value of the capacitive load connected to the output. This solution minimizes the peak current in the power outputs as well as any oscillation phenomenon in the power supplies. In addition, it reduces high-frequency components of the EMI spectrum by suppressing very rapid rising edge transitions on the power outputs. The total duration of the rising edge (tR-OUT) is set by another pair of logic inputs, RS1 and RS2, according to the table in Figure 7 below. Figure 7. Output rising edge 90% 10% t F-SLOW t F-OUT 100ns 0 1 200ns 1 1 50ns 1 0 10ns 0 0 t F-SLOW FS1 FS2 90% 10% t R-OUT R S1 =1 RS 2= 1 400ns 0 1 560ns 1 1 230ns 1 0 120ns 0 0 t R-OUT RS1 RS2 |
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