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ST10F272M 数据表(PDF) 123 Page - STMicroelectronics

部件名 ST10F272M
功能描述  16-bit MCU with 256 Kbyte Flash memory and 20 Kbyte RAM
PDF  175 Pages
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制造商  STMICROELECTRONICS [STMicroelectronics]
网页  http://www.st.com
标志 STMICROELECTRONICS - STMicroelectronics

ST10F272M 数据表(HTML) 123 Page - STMicroelectronics

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ST10F272M
Electrical characteristics
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24
Electrical characteristics
24.1
Absolute maximum ratings
Note:
Stresses above those listed under “Absolute Maximum Ratings” may cause permanent
damage to the device. This is a stress rating only and functional operation of the device at
these or any other conditions above those indicated in the operational sections of this
specification is not implied. Exposure to absolute maximum rating conditions for extended
periods may affect device reliability. During overload conditions (VIN > VDD or VIN < VSS) the
voltage on pins with respect to ground (VSS) must not exceed the values defined by the
Absolute Maximum Ratings.
During Power-on and Power-off transients (including Standby entering/exiting phases), the
relationships between voltages applied to the device and the main VDD must always be
respected. In particular, power-on and power-off of VAREF must be coherent with VDD
transient, in order to avoid undesired current injection through the on-chip protection diodes.
Table 52.
Absolute maximum ratings
Symbol
Parameter
Values
Unit
VDD
Voltage on VDD pins with respect to ground (VSS)
-0.5 to +6.5
V
VSTBY
Voltage on VSTBY pin with respect to ground (VSS)
-0.5 to +6.5
V
VAREF
Voltage on VAREF pins with respect to ground (VSS)
-0.3 to VDD
V
VAGND
Voltage on VAGND pins with respect to ground (VSS)VSS
V
VIO
Voltage on any pin with respect to ground (VSS)
-0.5 to VDD + 0.5
V
IOV
Input current on any pin during overload condition
± 10
mA
ITOV
Absolute sum of all input currents during overload condition
| 75 |
mA
TST
Storage temperature
-65 to +150
°C
ESD
ESD Susceptibility (Human Body Model)
2000
V



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