ST10F272M datasheet(32/175 Pages) STMICROELECTRONICS

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Internal Flash memory

ST10F272M

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5.4.5

Flash data register 0 low (FDR0L)

During program operations, the Flash Address Registers (FARH/L) are used to store the

Flash address in which to program and the Flash Data Registers (FDR1H/L-FDR0H/L) are

used to store the Flash data to program.

5.4.6

Flash data register 0 high (FDR0H)

Table 11.

Banks (BxS) and sectors (BxFy) status bits meaning

ERR

SUSP

B0S = 1 meaning

B0Fy = 1 meaning

Erase Error in Bank0

Erase Error in Sector y of Bank0

Erase Suspended in Bank0

Erase Suspended in Sector y of Bank0

Don’t care

FDR0L (0x08 0008)

FCR

Reset value: FFFFh

987

65432

DIN15 DIN14 DIN13 DIN12 DIN11 DIN10 DIN9 DIN8 DIN7 DIN6 DIN5 DIN4 DIN3 DIN2 DIN1 DIN0

Table 12.

Flash data register 0 low

Bit

Name

Function

15:0 DIN[15:0]

Data Input 15:0

These bits must be written with the Data to program the Flash with the following

operations: Word Program (32-bit), Double Word Program (64-bit) and Set

Protection.

FDR0H (0x08 000A)

FCR

Reset value: FFFFh

987

65432

DIN31 DIN30 DIN29 DIN28 DIN27 DIN26 DIN25 DIN24 DIN23 DIN22 DIN21 DIN20 DIN19 DIN18 DIN17 DIN16

Table 13.

Flash data register 0 high

Bit

Name

Function

15:0 DIN[31:16]

Data Input 31:16

These bits must be written with the Data to program the Flash with the following

operations: Word Program (32-bit), Double Word Program (64-bit) and Set

Protection.

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