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ST10F272M 数据表(PDF) 42 Page - STMicroelectronics

部件名 ST10F272M
功能描述  16-bit MCU with 256 Kbyte Flash memory and 20 Kbyte RAM
PDF  175 Pages
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制造商  STMICROELECTRONICS [STMicroelectronics]
网页  http://www.st.com
标志 STMICROELECTRONICS - STMicroelectronics

ST10F272M 数据表(HTML) 42 Page - STMicroelectronics

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Internal Flash memory
ST10F272M
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5.7
Write operation summary
In general, each write operation is started through a sequence of three steps:
1.
The first instruction is used to select the desired operation by setting its corresponding
selection bit in the Flash Control Register 0.
2.
The second step is the definition of the Address and Data for programming or the
Sectors or Banks to erase.
3.
The last instruction is used to start the write operation, by setting the start bit WMS in
the FCR0.
Once selected, but not yet started, one operation can be canceled by resetting the operation
selection bit.
Available Flash Module Write Operations are summarized in the following Table 25.
Figure 6 shows the complete flow needed for a Write operation.
Figure 6.
Write operation control flow
Table 25.
Flash write operations
Operation
Select bit
Address and data
Start bit
Word Program (32-bit)
WPG
FARL/FARH
FDR0L/FDR0H
WMS
Double Word Program (64-bit)
DWPG
FARL/FARH
FDR0L/FDR0H
FDR1L/FDR1H
WMS
Sector Erase
SER
FCR1L/FCR1H
WMS
Set Protection
SPR
FDR0L/FDR0H
WMS
Program/Erase Suspend
SUSP
None
None
Start Write Operation
FCR0L.LOCK == 0?
No
Yes
Write Operation finished?
(Check related busy bit)
No
Yes
Check Error Status
No error:
Proceed with application
Error:
Error handler, ...
Re-start operation



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