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ADS5271 数据表(PDF) 33 Page - Texas Instruments |
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ADS5271 数据表(HTML) 33 Page - Texas Instruments |
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33 / 42 page ![]() 0.1 F m 50W 50W 200W 200W IN P V CM IN N 0.1 F m 1:2 2:1 4.7W 4.7W 0.1 F m 0.1 F m 25W 25W 1:1 IN P V CM IN N ADS5287 www.ti.com SBAS428D – JANUARY 2008 – REVISED JUNE 2012 Driving Circuit At high input frequencies, the mismatch in the transformer parasitic capacitance (between the For optimum performance, the analog inputs must be windings) results in degraded even-order harmonic driven differentially. This approach improves the performance. Connecting two identical RF common-mode noise immunity and even-order transformers back-to-back helps to minimize this harmonic rejection. Input configurations using RF mismatch, and good performance is obtained for transformers suitable for low and high input high-frequency input signals. An additional frequencies are shown in Figure 33 and Figure 34, termination resistor pair is required between the two respectively. The single-ended signal is fed to the transformers, as shown in Figure 34. The center point primary winding of the RF transformer. The of this termination is connected to ground to improve transformer is terminated by 50 Ω resistor on the the balance between the positive and negative sides. secondary side. Placing the termination on the The values of the terminations between the secondary side helps to shield the kicks caused by transformers and on the secondary side must be the input sampling capacitors from the RF chosen to achieve an overall 50 Ω (in the case of 50Ω transformer leakage inductances. The termination is source impedance). accomplished by two 25 Ω resistors, connected in series, with the center point connected to the 1.5V common-mode. The 4.7 Ω resistor in series with each input pin is required to damp the ringing caused by the device package parasitics. Figure 33. Drive Circuit at Low Input Frequencies Figure 34. Drive Circuit at High Input Frequencies Copyright © 2008–2012, Texas Instruments Incorporated 33 |
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