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STDRIVE102HTR 数据表(PDF) 28 Page - STMicroelectronics |
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STDRIVE102HTR 数据表(HTML) 28 Page - STMicroelectronics |
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28 / 56 page ![]() Figure 18. Propagation delay in enable/input mode, ENx pin switching 50% 10% 90% ENx VGS,HSx td,on td,off 50% INx VGS,LSx 50% 10% 90% td,on td,off Figure 19. Propagation delay in direct mode (INHx/INLx) 50% 50% 10% 90% INHx INLx VGS,HSx VGS,LSx td,on td,off 5.2.3 VDS monitoring The STDRIVE102BH/H implements a monitoring of the drain-source voltage drop (VDS) of each MOSFET. During all the time the MOSFET is on, it is expected that the VDS keeps below a threshold, which depends on the RDS,on and the current flowing in the MOSEFT. If the VDS exceeds the threshold value set on the VDSTH analog pin (refer to Figure 20), the device triggers a FAULT condition: • The power stage is disabled: all the gate drivers are set LOW with the soft-off feature (see Section 5.4). This safe state is latched until a release request occurs (see below). • The nFAULT pin is forced low. To return in normal operation, the latched failure condition must be cleared in one of the following ways: • Set the standby state by forcing the nSTBY pin low (refer to Section 5.8). • Set the voltage on the EN pin lower than Vrelease for at least tEN,pulse_rel time. Note that the threshold voltage is an analog value, so it can be set to any value between the recommended ones. The protection can be disabled setting a voltage on VDSTH pin higher than VDSTH,dis. To avoid unexpected triggering of the protection during the transients of the power stage, a deglitch filter is present. To trigger the protection, the VDS must exceed the threshold for a time longer than the deglitch time tdg(VDS), which depends on the setting of the TCC pin (see Table 10). Since the three high-side MOSFETs are supposed to be connected to the same supply VM, the three different VDS are monitored referring them to the same VM pin. STDRIVE102BH, STDRIVE102H Device description DS14545 - Rev 1 page 28/56 |
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