STR910FAM32 datasheet(68/99 Pages) STMICROELECTRONICS

68 / 99 page

Electrical characteristics

STR91xFAx32 STR91xFAx42 STR91xFAx44

68/99

7.8.2

Flash memory characteristics

VDDQ = 2.7 - 3.6V, VDD = 1.65 - 2V, TA = -40 / 85 °C unless otherwise specified.

Note:

Flash read access for sequential addresses is 0 wait states at 96 MHz.

Flash read access for non-sequential accesses requires 2 wait states when FMI clock is

above 66 MHz. See STR91xF Flash Programming Manual for more information.

Table 24.

Flash memory program/erase characteristics

Parameter

Test Conditions

Value

Unit

Typ(1)

Typ after

100K W/E

cycles(1)

Max

Bank erase

Primary Bank (512 Kbytes)

11.5

Primary Bank (256 Kbytes)

4.5

Secondary Bank (32 Kbytes)

700

750

950

Sector erase

Of Primary Bank (64 Kbytes)

1300

1400

1800

Of Secondary Bank (8 Kbytes)

300

320

450

Bank program

Primary Bank (512 Kbytes)

3700

4700

5100

Primary Bank (256 Kbytes)

1900

2000

2550

Secondary Bank (32 Kbytes)

250

260

320

Sector program

Of Primary Bank (64 Kbytes)

500

520

640

Of Secondary Bank (8 Kbytes)

Word program

Half word (16 bits)

µs

VDD = 1.8V, VDDQ = 3.3V, TA = 25°C.

Table 25.

Flash memory endurance

Parameter

Test Conditions

Value

Unit

Min

Typ

Max

Program/erase cycles

Per word

100K

cycles

Data retention

years

STR910FAM32 数据表(PDF) 68 Page - STMicroelectronics

STR910FAM32 数据表(HTML) 68 Page - STMicroelectronics

Html Pages

1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47 48 49 50 51 52 53 54 55 56 57 58 59 60 61 62 63 64 65 66 67 68 69 70 71 72 73 74 75 76 77 78 79 80 81 82 83 84 85 86 87 88 89 90 91 92 93 94 95 96 97 98 99

数据表下载