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STR910FAM32 数据表(PDF) 69 Page - STMicroelectronics |
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STR910FAM32 数据表(HTML) 69 Page - STMicroelectronics |
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69 / 99 page ![]() STR91xFAx32 STR91xFAx42 STR91xFAx44 Electrical characteristics 69/99 7.9 EMC characteristics Susceptibility tests are performed on a sample basis during product characterization. 7.9.1 Functional EMS (electro magnetic susceptibility) Based on a simple running application on the product (toggling 2 LEDs through I/O ports), the product is stressed by two electro magnetic events until a failure occurs (indicated by the LEDs). ● ESD: Electro-Static Discharge (positive and negative) is applied on all pins of the device until a functional disturbance occurs. This test conforms with the IEC 1000-4-2 standard. ● FTB: A Burst of Fast Transient voltage (positive and negative) is applied to VDD, VDDQ and VSS through a 100pF capacitor, until a functional disturbance occurs. This test conforms with the IEC 1000-4-4 standard. A device reset allows normal operations to be resumed. 7.9.2 Electro magnetic interference (EMI) Based on a simple application running on the product (toggling 2 LEDs through the I/O ports), the product is monitored in terms of emission. This emission test is in line with the norm SAE J 1752/3 which specifies the board and the loading of each pin. Table 26. EMS data Symbol Parameter Conditions Severity/ Criteria(1) Unit VFESD Voltage limits to be applied on any I/O pin to induce a functional disturbance VDD=1.8V, VDDQ=3.3V, TA=+25°C, fOSC/fCPUCLK =4 MHz/96MHz PLL 1B kV VFFTB Fast transient voltage burst limits to be applied through 100pF on VDD and VDDQ pins to induce a functional disturbance VDD=1.8V, VDDQ=3.3V, TA=+25°C, fOSC/fCPUCLK =4 MHz/96 MHz PLL conforms to IEC 1000-4-4 4A 1. Data based on characterization results, not tested in production. Table 27. EMI data Symbo l Parameter Conditions Monitored Frequency Band Max vs. [fOSC/fCPUCLK] Unit 24 MHz / 48 MHz(1) 24 MHz / 96 MHz(1) SEMI Peak level VDDQ=3.3V, VDD=1.8V, TA=+25°C, LQFP128 package(2) conforming to SAE J 1752/3 0.1MHz to 30 MHz 14 10 dB µV 30 MHz to 130 MHz 18 19 130 MHz to 1GHz 18 22 SAE EMI Level 4 4 - 1. Data based on characterization results, not tested in production. 2. BGA and LQFP devices have similar EMI characteristics. |
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