| 数据搜索系统,热门电子元器件搜索 |
|
STR910FAM32 数据表(PDF) 70 Page - STMicroelectronics |
|
|
|||||||||||||||||||||||||||||
STR910FAM32 数据表(HTML) 70 Page - STMicroelectronics |
|
70 / 99 page ![]() Electrical characteristics STR91xFAx32 STR91xFAx42 STR91xFAx44 70/99 7.9.3 Absolute maximum ratings (electrical sensitivity) Based on three different tests (ESD, LU and DLU) using specific measurement methods, the product is stressed in order to determine its performance in terms of electrical sensitivity. 7.9.4 Electro-static discharge (ESD) Electro-Static Discharges (3 positive then 3 negative pulses separated by 1 second) are applied to the pins of each sample according to each pin combination. The sample size depends on the number of supply pins in the device (3 parts*(n+1) supply pin). This test conforms to the JESD22-A114A/A115A standard. For more details, refer to the application note AN1181. 7.9.5 Static latch-up Two complementary static tests are required on 10 parts to assess the latch-up performance. ● A supply overvoltage (applied to each power supply pin) and ● A current injection (applied to each input, output and configurable I/O pin) are performed on each sample. This test conforms to the EIA/JESD 78 IC latch-up standard. For more details, refer to the application note AN1181. 7.9.6 Designing hardened software to avoid noise problems EMC characterization and optimization are performed at component level with a typical application environment and simplified MCU software. It should be noted that good EMC performance is highly dependent on the user application and the software in particular. Therefore it is recommended that the user applies EMC software optimization and prequalification tests in relation with the EMC level requested for his application. Software recommendations: The software flowchart must include the management of runaway conditions such as: ● Corrupted program counter ● Unexpected reset ● Critical Data corruption (control registers...) Prequalification trials: Table 28. ESD data Symbol Ratings Conditions Class Maximum value (1) Unit VESD(HBM) Electro-static discharge voltage (Human Body Model) TA=+25°C conforming to JESD22-A114 2 +/-2000 V VESD(CDM) Electro-static discharge voltage (Charged Device Model) TA=+25°C conforming to JESD22-C101 II 1000 1. Data based on characterization results, not tested in production. |
|
链接网址 |
| ALLDATASHEET是否为您带来帮助? [ DONATE ] |
关于 Alldatasheet | 广告服务 | 联系我们 | 隐私政策 | 数据表链接 | 链接交换 | 制造商名单 All Rights Reserved©Alldatasheet.com |
| Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
|
Family Site : ic2ic.com |
icmetro.com |