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数据搜索系统，热门电子元器件搜索 |
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数据搜索系统，热门电子元器件搜索 |
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PM6641 数据表(PDF) 10 Page - STMicroelectronics |
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PM6641 数据表(HTML) 10 Page - STMicroelectronics |
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10 / 47 page  Electrical characteristics PM6641 10/47 Symbol Parameter Test condition Values Unit Min Typ Max Thermal shutdown TSHDN Thermal shutdown threshold 150 °C Thermal shutdown hysteresis 15 Switching node – chipset 1.5 V rail tOnmin Minimum On-Time 200 ns RDSon,HS High side PMOS Ron 150 220 m Ω RDSon,LS Low side NMOS Ron 100 160 IINLEAK VIN_1S5 leakage current VAVCC = VVCC = +5 V, all EN_1S5 low VIN = +5 V 1 µA VIN = +3.3 V Peak current limit RCSNS = 50 kΩ 3.9 A Soft end section – chipset 1.5 V rail Discharge resistance 25 Ω LS Turn-on VFB_1SX Threshold with internal divider VFB_S1X to OUT_X 0.29 V LS Turn-on VFB_1SX Threshold with external divider VFB_S1X to external dvider 0.16 Power management section – chipset 1.5 V rail EN_1S5 Turn-Off level VAVCC = 5 V 0.8 V EN_1S5 Turn-On level 2 Switching node – chipset 1.05 V rail tOnmin Minimum On-Time 180 ns RDSon,HS High side PMOS Ron 100 160 m Ω RDSon,LS Low side NMOS Ron 70 110 IINLEAK VIN_1S05 leakage current VAVCC = VVCC = +5 V, all EN_1S05 low VIN = +5 V 1 µA VIN = +3.3 V 1 Peak current limit RCSNS = 50 kΩ 5.1 A Table 6. Electrical characteristics (continued) |
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