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PM6641 数据表(PDF) 11 Page - STMicroelectronics

部件名 PM6641
功能描述  Monolithic VR for chipset and DDR2/3 supply for ultra-mobile PC (UMPC) applications
PDF  47 Pages
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制造商  STMICROELECTRONICS [STMicroelectronics]
网页  http://www.st.com
标志 STMICROELECTRONICS - STMicroelectronics

PM6641 数据表(HTML) 11 Page - STMicroelectronics

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PM6641
Electrical characteristics
11/47
Symbol
Parameter
Test condition
Values
Unit
Min
Typ
Max
Soft end section – chipset 1.05 V rail
Discharge resistance
25
Ω
LS Turn-on VFB_1SX
Threshold with internal divider
VFB_S1X to OUT_X
0.2
V
LS Turn-on VFB_1SX
Threshold with external divider
VFB_S1X to external divider
0.16
Power management section – chipset 1.05 V rail
EN_1S05 Turn-Off level
VAVCC = +5 V
0.8
V
EN_1S05 Turn-On level
2
Switching node – DDR2/3 rails
tOnmin
Minimum On-Time
200
ns
RDSon,HS
High side PMOS Ron
90
130
m
Ω
RDSon,LS
Low side NMOS Ron
80
120
IINLEAK
VIN_1S8 leakage current
VAVCC = VVCC = 5 V,
all EN_1S8 low
VIN =
+5 V
1
µA
VIN =
+3.3 V
1
Peak current limit
RCSNS = 50 kΩ
6.1
A
Soft end section – DDR2/3 rails
VDDQ discharge resistance in
non-tracking discharge mode
25
Ω
VTTREF discharge resistance
in non-tracking discharge mode
200
Ω
VTTFB discharge resistance in
non-tracking discharge mode
40
Ω
VFB_1SX Threshold for final
tracking/Non-tracking discharge
transition with internal divider
VFB_S1X to OUT_X
0.340
V
VFB_1SX Threshold for final
tracking/Non-tracking discharge
transition with external divider
VFB_S1X to external divider
0.160
V
Table 6. Electrical characteristics (continued)



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