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FDMS8672AS 数据表(PDF) 30 Page - Texas Instruments |
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FDMS8672AS 数据表(HTML) 30 Page - Texas Instruments |
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30 / 43 page ![]() RCnetwork nexttoIC Currentsensing Device InnerSignal-GNDplane 0W resistor GND Toinner Power-GND layer Toinner Signal-GND plane #28 GND-pin TPS51222 SLUS908 – JANUARY 2009............................................................................................................................................................................................... www.ti.com sensing comparator inputs (CSPx and CSNx). (See Figure 48) Figure 48. Current Sensing Traces • Use small copper space for VFBx. These are short and narrow traces to avoid noise coupling • Connect VFB resistor trace to the positive node of the output capacitor. • Use signal GND for VREF2 and VREG3 capacitors, RF and VFB resistors, and the other sensitive analog components. Placing a signal GND plane (underneath the IC, and fully covered peripheral components) on the internal layer for shielding purpose is recommended. (See Figure 49) • Use a thermal land for PowerPAD™. Five or more vias, with 0.33-mm (13-mils) diameter connected from the thermal land to the internal GND plane, should be used to help dissipation. Do NOT connect the GND-pin to this thermal land on the surface layer, underneath the package. Routing (power portion) • Use wider/shorter traces of DRVL for low-side gate drivers to reduce stray inductance. • Use the parallel traces of SW and DRVH for high-side MOSFET gate drive, and keep them away from DRVL. • Connect SW trace to source terminal of the high-side MOSFET. • Use power GND for VREG5, VIN and V OUT capacitors and low-side MOSFETs. Power GND and signal GND should be connected near the device GND terminal. (See Figure 49) Figure 49. GND Layout Example 30 Submit Documentation Feedback Copyright © 2009, Texas Instruments Incorporated Product Folder Link(s) :TPS51222 |
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