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BQ28Z610-R1 数据表(PDF) 19 Page - Texas Instruments

部件名 BQ28Z610-R1
功能描述  BQ28Z610-R1 Impedance Track™ Gas Gauge and Protection Solution for 1-Series to 2-Series Cell Li-Ion Battery Packs
PDF  38 Pages
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制造商  TI2 [Texas Instruments]
网页  https://www.ti.com
标志 TI2 - Texas Instruments

BQ28Z610-R1 数据表(HTML) 19 Page - Texas Instruments

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CAUTION
If the device is configured as a single-master architecture (an application processor) and an
occasional NACK is detected in the operation, the master can resend the transaction. However,
in a multi-master architecture, an incorrect ACK leading to accidental loss of bus arbitration can
cause a master to wait incorrectly for another master to clear the bus. If this master does not get
a bus-free signal, then it must have in place a method to look for the bus and assume it is free
after some period of time. Also, if possible, set the clock speed to be 100 kHz or less to significantly
reduce the issue described above for multi-mode operation.
8.3.12 I2C Timeout
The I2C engine will release both SDA and SCL if the I2C bus is held low for ~2 seconds. If the BQ28Z610-R1
device were holding the lines, releasing them frees the master to drive the lines. Note: that the low time setting
can be under firmware control but the HW default is 2 seconds.
8.3.13 Cell Balancing Support
The integrated cell balancing FETs included in the BQ28Z610-R1 device enable the AFE to bypass cell current
around a given cell or numerous cells to effectively balance the entire battery stack. External series resistors
placed between the cell connections and the VCx input pins set the balancing current magnitude. The cell
balancing circuitry can be enabled or disabled via the CELL_BAL_DET[CB2, CB1] control register. Series input
resistors between 100 Ω and 1 kΩ are recommended for effective cell balancing.
VC1
VC2
VSS
Figure 8-3. Internal Cell Balancing
8.3.14 N-Channel Protection FET Drive
The BQ28Z610-R1 device controls two external N-Channel MOSFETs in a back-to-back configuration for battery
protection. The charge (CHG) and discharge (DSG) FETs are automatically disabled if a safety fault (AOLD,
ASSC, ASCD, SOV) is detected, and can also be manually turned off using AFE_CONTROL[CHGEN, DSGEN]
= 0, 0. When the gate drive is disabled, an internal circuit discharges CHG to VC2 and DSG to PACK.
8.3.15 Low Frequency Oscillator
The BQ28Z610-R1 AFE includes a low frequency oscillator (LFO) running at 262.144 kHz. The AFE monitors
the LFO frequency and indicates a failure via LATCH_STATUS[LFO] if the output frequency is much lower than
normal.
8.3.16 High Frequency Oscillator
The BQ28Z610-R1 AGG includes a high frequency oscillator (HFO) running at 16.78 MHz. It is synthesized from
the LFO output and scaled down to 8.388 MHz with 50% duty cycle.
www.ti.com
BQ28Z610-R1
SLUSE07B – JANUARY 2020 – REVISED JANUARY 2022
Copyright © 2022 Texas Instruments Incorporated
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