5

CDCLVC1102, CDCLVC1103, CDCLVC1104

CDCLVC1106, CDCLVC1108, CDCLVC1110, CDCLVC1112

www.ti.com

SCAS895B – MAY 2010 – REVISED FEBRUARY 2017

Product Folder Links: CDCLVC1102 CDCLVC1103 CDCLVC1104 CDCLVC1106 CDCLVC1108 CDCLVC1110

CDCLVC1112

Submit Documentation Feedback

Copyright © 2010–2017, Texas Instruments Incorporated

(1)

Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings

only and functional operation of the device at these or any other conditions beyond those indicated under Recommended Operating

Conditions is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.

(2)

This value is limited to 4.6 V maximum.

6 Specifications

6.1 Absolute Maximum Ratings

over operating free-air temperature range (unless otherwise noted)

(1)

MIN

MAX

UNIT

VDD

Supply voltage

–0.5

4.6

V

VIN

Input voltage(2)

–0.5

VDD + 0.5

V

VO

Output voltage(2)

–0.5

VDD + 0.5

V

IIN

Input current

–20

20

mA

IO

Continuous output current

–50

50

mA

TJ

Maximum junction temperature

125

°C

Tstg

Storage temperature

–65

150

°C

(1)

JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process.

(2)

JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process.

6.2 ESD Ratings

VALUE

UNIT

V(ESD)

Electrostatic discharge

Human-body model (HBM), per ANSI/ESDA/JEDEC JS-001(1)

±4000

V

Charged-device model (CDM), per JEDEC specification JESD22-C101(2)

±1500

6.3 Recommended Operating Conditions

over operating free-air temperature range (unless otherwise noted)

MIN

NOM

MAX

UNIT

VDD

Supply voltage

3.3-V supply

3.0

3.3

3.6

V

2.5-V supply

2.3

2.5

2.7

VIL

Low-level input voltage

VDD = 3.0 V to 3.6 V

VDD/2 – 600

mV

VDD = 2.3 V to 2.7 V

VDD/2 – 400

VIH

High-level input voltage

VDD = 3.0 V to 3.6 V

VDD/2 + 600

mV

VDD = 2.3 V to 2.7 V

VDD/2 + 400

Vth

Input threshold voltage

VDD = 2.3 V to 3.6 V

VDD/2

mV

tr / tf

Input slew rate

1

4

V/ns

tw

Minimum pulse width at

CLKIN

VDD = 3.0 V to 3.6 V

1.8

ns

VDD = 2.3 V to 2.7 V

2.75

fCLK

LVCMOS clock Input

Frequency

VDD = 3.0 V to 3.6 V

DC

250

MHz

VDD = 2.3 V to 2.7 V

DC

180

TA

Operating free-air temperature

–40

85

°C