6.5 Typical Characteristics (continued)

at operating temperature TJ = 25°C, VIN = VOUT(NOM) + 1.0 V or 2.5 V (whichever is greater), IOUT = 1 mA, CIN = 1 µF, and

COUT = 1 µF (unless otherwise noted)

8

7

6

5

4

3

2

1

0

100

1 k

10 k

100 k

Frequency (Hz)

V

= 4.3 V

V

= 3.3 V

C

= 1 F

IN

OUT

OUT

m

I

= 50 mA

OUT

I

= 1 mA

OUT

Figure 6-19. Output Spectral Noise Density vs Frequency for

Legacy Chip

f - Frequency - Hz

1x101

1x102

1x103

1x104

1x105

1x106

1x107

0.001

0.002

0.005

0.01

0.02

0.05

0.1

0.2

0.5

1

2

5

10

20

20

Integrated Noise from

200Hz to 100KHz

1mA : 473

VRMS

50mA : 565

VRMS

1mA

50mA

Figure 6-20. Output Spectral Noise Density vs Frequency for

New Chip

V

= 4.3 V

V

= 3.3 V

C

= 10 F

T = +25 C

IN

OUT

OUT

m

J

°

I

= 50 mA

OUT

I

= 1 mA

OUT

100

90

80

70

60

50

40

30

20

10

0

10

100

1 k

10 k

100 k

1 M

10 M

Frequency (Hz)

Figure 6-21. Power-Supply Ripple Rejection vs Frequency for

Legacy Chip

f - Frequency (Hz)

1x101

1x102

1x103

1x104

1x105

1x106

1x107

0

10

20

30

40

50

60

70

80

90

100

VIN = 4.3V

VOUT = 3.3V

COUT = 10F

TJ = 25C

1mA

50mA

Figure 6-22. Power-Supply Ripple Rejection vs Frequency for

New Chip

V

= 3.3 V

C

= 10 F

OUT

OUT

m

R = 66

L

W

V

IN

V

OUT

8

7

6

5

4

3

2

1

0

Time (2 ms/div)

Figure 6-23. Power-Up, Power-Down for Legacy Chip

t - Time - ms

0

2

4

6

8

10

12

14

16

18

20

22

0

1

2

3

4

5

6

7

8

VOUT

VIN

VOUT = 3.3V

IOUT = 50mA

COUT = 10F

Figure 6-24. Power-Up, Power-Down for New Chip

TLV704

SBVS148F – SEPTEMBER 2010 – REVISED MARCH 2023

www.ti.com

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