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ADGM3121BCCZ-R2 数据表(PDF) 7 Page - Analog Devices

部件名 ADGM3121BCCZ-R2
功能描述  3mm × 3mm DPDT MEMS Switch, 0Hz/DC to 24GHz
PDF  33 Pages
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制造商  AD [Analog Devices]
网页  http://www.analog.com
标志 AD - Analog Devices

ADGM3121BCCZ-R2 数据表(HTML) 7 Page - Analog Devices

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Data Sheet
ADGM3121
SPECIFICATIONS
analog.com
Rev. 0 | 7 of 33
Table 1. Specifications (Continued)
Parameter
Symbol
Min
Typ1
Max
Unit
Test Conditions/Comments2
LEAKAGE PROPERTIES
On Leakage7
0.7
1.1
1.39
µA
RFxx(off channels) = +6V; RFCx/RFxx (on
channel) = −6V; maximum value tested from
−40°C to +85°C
Off Leakage7
0.34
0.6
0.77
µA
RFxx = +6V; RFCx = −6V; maximum value
tested from −40°C to +85°C
Internal Shunt Resistor
8.7
11.5
15.2
Typical temperature coefficient = 27.5 kΩ/°C,
maximum and minimum value tested at 25°C
DIGITAL INPUTS
Minimum and maximum over −40°C to 85°C
Input High Voltage
VINH
2
V
Input Low Voltage
VINL
0.8
V
Input Current
IINL/IINH
0.025
1
µA
VIN = VINL or VINH
Capacitance
5
pF
DIGITAL OUTPUTS
Minimum and maximum over −40°C to 85°C
Output Low Voltage
VOL
0.4
VMAX
ISINK = 1mA
Output High Voltage
VOH
VDD − 0.4V
VMIN
ISOURCE = 1mA
Capacitance
5
pF
POWER REQUIREMENTS
Minimum and maximum over −40°C to 85°C
Supply Voltage
VDD
3.0
3.6
V
Supply Current
IDD
2.5
mA
Digital inputs = 0V or VDD, SDO floating in SPI
mode
1 Typical specifications tested at 25°C with VDD = 3.3V.
2 RFxx is RF1A, RF1B, RF2A, and RF2B. RFCx is RFCA or RFCB. INx is IN1, IN2, IN3, and IN4.
3 This value shows the time it takes for 1% of a sample lot to fail.
4 Switch is settled after 200µs. Do not apply RF power between 0µs to 200µs.
5 RF power should be removed or less than 5dBm, 50µs before turning the switch off.
6 Spectrum analyzer setup: resolution bandwidth (RBW) = 200Hz, video bandwidth (VBW) = 2Hz, span = 100kHz, input attenuator = 0dB, detector type = peak, and max hold
= off. Measurements taken with one switch on and off switch port terminated into 50 Ω. The fundamental feedthrough noise or harmonic thereof is tested (whichever is the
highest).
7 The on leakage and off leakage specifications depend on the DC voltage level applied to the switch node. For example, if 1V is applied at RFxx to RFCx, the on leakage
specification is 0.2µA and off leakage specification is 0.1µA. The leakage specification of the switch is mainly driven by the internal 10MΩ resistors to ground connected on
all the RF nodes to avoid floating nodes.



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