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LTC6754ISC6#TRMPBF 数据表(PDF) 6 Page - Analog Devices |
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LTC6754ISC6#TRMPBF 数据表(HTML) 6 Page - Analog Devices |
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6 / 22 page ![]() LTC6754 6 6754f For more information www.linear.com/LTC6754 SYMBOL PARAMETER CONDITIONS MIN TYP MAX UNITS tJIT_RMS RMS Jitter, Sine Wave Input VIN=200mVP–P fIN=245.76MHz, Jitter BW=10Hz–122.88MHz fIN=245.76MHz, Jitter BW=12kHz–20MHz fIN=100MHz, Jitter BW=10Hz–50MHz fIN=100MHz, Jitter BW=12kHz–20MHz fIN=61.44MHz, Jitter BW=10Hz–30.72MHz fIN=61.44MHz, Jitter BW=12kHz–20MHz fIN=10MHz, Jitter BW=10Hz–5MHz 1.6 0.73 2.2 1.36 3 2.4 19 ps ps ps ps ps ps ps Latching/Adjustable Hysteresis Characteristics VLE/HYST LE/HYST Pin Voltage Open Circuit l 1.05 1.25 1.45 V RHYST Resistor Value at LE/HYST LE/HYST Pin Voltage < Open Circuit Value l 11.6 14.5 17.6 kΩ VHYST_LARGE Hysteresis Voltage VLE/HYST = 800mV 43 mV VIL_LE Latch Pin Voltage, Latch Guaranteed l 0.4 V VIH_LE Latch Pin Voltage, Hysteresis Disabled l 1.7 V IIH_LE Latch Pin Current High VLE/HYST = 1.7V l 31 70 µA IIL_LE Latch Pin Current Low VLE/HYST = 0.4V l –78 –58 µA tSETUP Latch Setup Time 2 ns tHOLD Latch Hold Time –2 ns tPL Latch to Output Delay 3 ns Shutdown Characteristics ISD_VCCI Shutdown Mode Input Stage Supply Current VSHDN = 0.8V l 650 880 970 μA µA ISD_VCCO Shutdown Mode Output Stage Supply Current VSHDN = 0.8V l 240 370 380 μA µA ISD_TOT Shutdown Mode Total Supply Current VSHDN = 0.8V l 0.89 1.25 1.35 mA mA tSD Shutdown Time Output Hi-Z 110 ns VIH_SD Shutdown Pin Voltage High Part Guaranteed to be Powered On l 2 V VIL_SD Shutdown Pin Voltage Low Part Guaranteed to be Powered Off 0.8 V tWAKEUP Wake-Up Time from Shutdown VOVERDRIVE = 100mV, Output Valid 120 ns The l denotes the specifications which apply over the specified temperature range, otherwise specifications are at TA = 25°C, LE/HYST, SHDN pins floating, VOVERDRIVE = 50mV, –IN = VCM = 300mV, +IN = –IN + VOVERDRIVE, 150mV step size, RL=100Ω , unless otherwise noted. elecTrical characTerisTics (VCCI = VCCO = 2.5V) Note 1: Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. Exposure to any Absolute Maximum Rating condition for extended periods may affect device reliability and lifetime. Note 2: Reverse biased ESD protection exists on all input, shutdown, latching/hysteresis and output pins. If the voltage on the input, shutdown, or latching/hysteresis pins goes beyond either input supply, the current should be limited to less than 10mA. This parameter is guaranteed to meet specification through design and/or characterization. It is not production tested. Note 3: A heat sink may be required to keep the junction temperature below the absolute maximum rating. This parameter is guaranteed to meet specified performance through design and/or characterization. It is not production tested. Note 4: The LTC6754I is functional and guaranteed to meet specified performance from –40 °C to 85 °C. The LTC6754H is functional and guaranteed to meet specified performance from –40 °C to 125 °C. Note 5: Supply voltage range is guaranteed by the PSRR test. Note 6: Both hysteresis and offset are measured by determining positive and negative trip points (input values needed to change the output in the opposite direction). Hysteresis is defined as the difference of the two trip points and offset as the average of the two trip points. Note 7: Guaranteed by CMRR spec. Note 8: Propagation delays are measured with a step size of 150mV. Note 9: Latch setup time is defined as the minimum time before the LE/HYST pin is asserted low for an input signal change to be acquired and held at the output. Latch hold time is defined as the minimum time before an input signal change for a high to low transition on the LE/HYST pin to prevent the output from changing. Latch enable pulse width is defined as the minimum time for the LE/HYST pin to be held high for an input change to affect the output. See Figure 7 for a graphical definition of these terms. Note 10: The devices have effectively infinite gain when hysteresis is enabled. |
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