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MPF0900AMMA2ES 数据表(PDF) 113 Page - NXP Semiconductors |
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MPF0900AMMA2ES 数据表(HTML) 113 Page - NXP Semiconductors |
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113 / 205 page ![]() NXP Semiconductors PF09 Nine-channel power management IC with advanced system safety monitoring All parameters are specified at TA = -40 °C to 125 °C, VLDO1IN = 1.8 V to 5.5 V, VIN = UVDET to 5.5 V, VLDO1 = 3.3 V, ILDO1 = 500 mA, and typical external component values unless otherwise noted. Typical values are characterized at VLDO1IN = 5.0 V, VLDO1 = 3.3 V, ILDO1 = 500 mA, TA = 25 °C, unless otherwise noted. Symbol Description Min Typ Max Unit tOFF_LDO1 Turn-off time • Output disabled to 10 % of initial value • VLDO1 = 3.3 V • ILDO1 = 0.0 mA • COUT = 2.2 μF – 650 – µs VOS_LDO1 Startup overshoot – – 2 % VLOTR_LDO1 Load transient response • ILDO1 = 200 mA step in 2.0 μs -2 – -2 % tON_LS1 Load switch turn-on rise time – 150 300 µs ILIM_LS1 Load switch mode current limit 550 – 900 mA RPD_LDO1 Output discharge resistor – 60 100 Ω RTBB_LDO1 LDO DEBUG pulldown resistance – used to detect pin lift or pin disconnection • VDDOTP > 3.0 V and in DBGOFF state 1 2 – kΩ Table 145. LDO1 electrical characteristics...continued aaa-061957 VLD_OUT (V) 1.5 3.5 3 2.5 2 0.1 0.2 0.3 ILD_OUT (A) 0 RDSON LDO1 Figure 25. RDSON vs. VLDOUT for LDO1 Symbol Description Min Typ Max Units COUT Effective output capacitance • 4.7 μF, 6.3 V (+/- 50 % variation) • X7R low ESR ceramic capacitor. 2.3 4.7 7 µF CIN Input capacitor • 1 μF, 10 V • X7R Low ESR ceramic capacitor 0.5 1 2 µF Table 146. LDO1 recommended external components. PF09 All information provided in this document is subject to legal disclaimers. © 2026 NXP B.V. All rights reserved. Product data sheet Rev. 1.3 — 16 December 2025 Document feedback 113 / 205 |
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