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STM32L4P5CE 数据表(PDF) 141 Page - STMicroelectronics

部件名 STM32L4P5CE
功能描述  Ultra-low-power Arm® Cortex®-M4 32-bit MCUFPU, 150 DMIPS, up to 1-MB Flash memory, 320-KB SRAM, LCD-TFT, ext. SMPS
PDF  311 Pages
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制造商  STMICROELECTRONICS [STMicroelectronics]
网页  http://www.st.com
标志 STMICROELECTRONICS - STMicroelectronics

STM32L4P5CE 数据表(HTML) 141 Page - STMicroelectronics

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DS12903 Rev 2
141/311
STM32L4P5xx
Electrical characteristics
277
VPVD1
PVD threshold 1
Rising edge
2.26
2.31
2.36
V
Falling edge
2.15
2.20
2.25
VPVD2
PVD threshold 2
Rising edge
2.41
2.46
2.51
V
Falling edge
2.31
2.36
2.41
VPVD3
PVD threshold 3
Rising edge
2.56
2.61
2.66
V
Falling edge
2.47
2.52
2.57
VPVD4
PVD threshold 4
Rising edge
2.69
2.74
2.79
V
Falling edge
2.59
2.64
2.69
VPVD5
PVD threshold 5
Rising edge
2.85
2.91
2.96
V
Falling edge
2.75
2.81
2.86
VPVD6
PVD threshold 6
Rising edge
2.92
2.98
3.04
V
Falling edge
2.84
2.90
2.96
Vhyst_BORH0
Hysteresis voltage of
BORH0
Hysteresis in
continuous mode
-20
-
mV
Hysteresis in
other mode
-30
-
Vhyst_BOR_PVD
Hysteresis voltage of BORH
(except BORH0) and PVD
--
100
-
mV
IDD
(BOR_PVD)(2)
BOR(3) (except BOR0) and
PVD consumption from VDD
with ENULP=0
-
-
1.1
1.6
µA
BOR(3) (except BOR0) and
PVD consumption from VDD
with ENULP=1
-
-
55
1000
nA
VPVM1
VDDUSB peripheral voltage
monitoring
-
1.18
1.22
1.26
V
VPVM3
VDDA peripheral voltage
monitoring
Rising edge
1.61
1.65
1.69
V
Falling edge
1.6
1.64
1.68
VPVM4
VDDA peripheral voltage
monitoring
Rising edge
1.78
1.82
1.86
V
Falling edge
1.77
1.81
1.85
Vhyst_PVM3
PVM3 hysteresis
-
-
10
-
mV
Vhyst_PVM4
PVM4 hysteresis
-
-
10
-
mV
IDD
(PVM1/PVM2)(2)
PVM1 and PVM2
consumption from VDD
-
-
0.2
-
µA
IDD
(PVM3/PVM4)(2)
PVM3 and PVM4
consumption from VDD
--
2
-
µA
1. Continuous mode means Run/Sleep modes, or temperature sensor enable in Low-power run/Low-power
sleep modes.
2. Guaranteed by design.
Table 23. Embedded reset and power control block characteristics (continued)
Symbol
Parameter
Conditions(1)
Min
Typ
Max
Unit



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