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STM32L4P5CE 数据表(PDF) 181 Page - STMicroelectronics |
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STM32L4P5CE 数据表(HTML) 181 Page - STMicroelectronics |
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181 / 311 page ![]() DS12903 Rev 2 181/311 STM32L4P5xx Electrical characteristics 277 6.3.6 Wakeup time from low-power modes and voltage scaling transition times The wakeup times given in Table 52 are the latency between the event and the execution of the first user instruction. The device goes in low-power mode after the WFE (wait for event) instruction. Table 52. Low-power mode wakeup timings(1) Symbol Parameter Conditions Typ Max Unit tWUSLEEP Wakeup time from Sleep mode to Run mode -6 7.8 Nb of CPU cycles tWULPSLEEP Wakeup time from Lowpower sleep mode to Lowpower run mode Wakeup in Flash with Flash in power-down during low-power sleep mode (SLEEP_PD=1 in FLASH_ACR) and with clock MSI = 2 MHz 79 tWUSTOP0 Wake up time from Stop 0 mode to Run mode in Flash range1 Wakeup clock MSI = 48 MHz 9 9.7 μs Wakeup clock HSI16 = 16 MHz 8.3 8.9 range2 Wakeup clock MSI = 24 MHz 18.6 19.5 Wakeup clock HSI16 = 16 MHz 17.5 18.2 Wakeup clock MSI = 4 MHz 23.7 26.4 Wake up time from Stop 0 mode to Run mode in SRAM1 range1 Wakeup clock MSI = 48 MHz 1.8 2.5 Wakeup clock HSI16 = 16 MHz 2.5 2.8 range2 Wakeup clock MSI = 24 MHz 2.4 3.1 Wakeup clock HSI16 = 16 MHz 2.5 2.9 Wakeup clock MSI = 4 MHz 9.2 11.4 |
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