STM32L4P5CE datasheet(197/311 Pages) STMICROELECTRONICS

部件名	STM32L4P5CE

功能描述	Ultra-low-power Arm® Cortex®-M4 32-bit MCUFPU, 150 DMIPS, up to 1-MB Flash memory, 320-KB SRAM, LCD-TFT, ext. SMPS

PDF	311 Pages

Scroll/Zoom	100%

制造商	STMICROELECTRONICS [STMicroelectronics]

网页	http://www.st.com

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197 / 311 page

DS12903 Rev 2

197/311

STM32L4P5xx

Electrical characteristics

277

6.3.10

Flash memory characteristics

Table 64. Flash memory characteristics(1)

1. Guaranteed by design.

Symbol

Parameter

Conditions

Typ

Max

Unit

tprog

64-bit programming time

81.69

83.35

µs

tprog_row

One row (64 double

word) programming time

Normal programming

5.23

5.33

Fast programming

3.80

3.88

tprog_page

One page (4 Kbytes)

programming time

Normal programming

41.82

42.68

Fast programming

30.39

31.01

tERASE

Page (4 Kbytes) erase

time

22.02

24.47

tprog_bank

One bank (512 Kbytes)

programming time

Normal programming

5.35

5.46

Fast programming

3.89

3.97

tME

Mass erase time

(one or two banks)

22.13

24.59

IDD

Average consumption

from VDD

Write mode

3.4

Erase mode

3.4

Maximum current (peak)

Write mode

7 (for 6 µs)

Erase mode

7 (for 67 µs)

Table 65. Flash memory endurance and data retention

Symbol

Parameter

Conditions

Min(1)

1. Guaranteed by characterization results.

Unit

NEND

Endurance

TA = –40 to +105 °C

kcycles

tRET

Data retention

1 kcycle(2) at TA = 85 °C

2. Cycling performed over the whole temperature range.

Years

1 kcycle(2) at TA = 105 °C

1 kcycle(2) at TA = 125 °C

10 kcycles(2) at TA = 55 °C

10 kcycles(2) at TA = 85 °C

10 kcycles(2) at TA = 105 °C

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