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STM32L4P5CE 数据表(PDF) 221 Page - STMicroelectronics

部件名 STM32L4P5CE
功能描述  Ultra-low-power Arm® Cortex®-M4 32-bit MCUFPU, 150 DMIPS, up to 1-MB Flash memory, 320-KB SRAM, LCD-TFT, ext. SMPS
PDF  311 Pages
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制造商  STMICROELECTRONICS [STMicroelectronics]
网页  http://www.st.com
标志 STMICROELECTRONICS - STMicroelectronics

STM32L4P5CE 数据表(HTML) 221 Page - STMicroelectronics

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DS12903 Rev 2
221/311
STM32L4P5xx
Electrical characteristics
277
Figure 39. ADC accuracy characteristics
Figure 40. Typical connection diagram using the ADC
1. Refer to Table 77: ADC characteristics for the values of RAIN and CADC.
2. Cparasitic represents the capacitance of the PCB (dependent on soldering and PCB layout quality) plus the
pad capacitance (refer to Table 71: I/O static characteristics for the value of the pad capacitance). A high
Cparasitic value downgrades the conversion accuracy. To remedy this, fADC should be reduced.
3. Refer to Table 71: I/O static characteristics for the values of Ilkg.
General PCB design guidelines
Power supply decoupling should be performed as shown in Figure 26: STM32L4P5xx
power supply scheme. The 10 nF capacitor should be ceramic (good quality) and it should
be placed as close as possible to the chip.
ET = total unajusted error: maximum deviation
between the actual and ideal transfer curves.
EO = offset error: maximum deviation
between the first actual transition and
the first ideal one.
EG = gain error: deviation between the last
ideal transition and the last actual one.
ED = differential linearity error: maximum
deviation between actual steps and the ideal ones.
EL = integral linearity error: maximum deviation
between any actual transition and the end point
correlation line.
(1) Example of an actual transfer curve
(2) The ideal transfer curve
(3) End point correlation line
4095
4094
4093
7
6
5
4
3
2
1
0
23
4
5
6
1
7
4093 4094 4095 4096
VDDA
VSSA
EO
ET
EL
EG
ED
1 LSB IDEAL
(1)
(3)
(2)
MS19880V2
MS33900V5
Sample and hold ADC converter
12-bit
converter
Cparasitic
(2)
Ilkg
(3)
VT
CADC
VDDA
RAIN
(1)
VAIN
VT
AINx
RADC



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