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M28F101 数据表(PDF) 7 Page - STMicroelectronics |
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M28F101 数据表(HTML) 7 Page - STMicroelectronics |
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7 / 23 page ![]() Read Mode. The Read Mode is the default at power up or may be set-up by writing 00h to the command register. Subsequent read operations output data from the memory. The memory remains in the Read Mode until a new command is written to the command register. Electronic Signature Mode. In order to select the correct erase and programming algorithms for on- board programming, the manufacturer and device codes may be read directly. It is not neccessary to apply a high voltage to A9 when using the com- mand register. The Electronic Signature Mode is set-up by writing 90h to the command register. The following read cycles, with address inputs 00000h or 00001h, output the manufacturer or device type codes. The command is terminated by writing an- other valid command to the command register (for example Reset). Symbol Alt Parameter Test Condition M28F101 Unit -70 -90 -100 VCC=5V ±5% VCC=5V±10% VCC=5V±10% SRAM Interface EPROM Interface EPROM Interface Min Max Min Max Min Max tWHGL Write Enable High to Output Enable Low 66 6 µs tAVAV tRC Read Cycle Time E = VIL,G = VIL 70 90 100 ns tAVQV tACC Address Valid to Output Valid E=VIL,G = VIL 70 90 100 ns tELQX (1) tLZ Chip Enable Low to Output Transition G= VIL 00 0 ns tELQV tCE Chip Enable Low to Output Valid G= VIL 70 90 100 ns tGLQX (1) tOLZ Output Enable Low to Output Transition E= VIL 00 0 ns tGLQV tOE Output Enable Low to Output Valid E= VIL 40 40 45 ns tEHQZ (1) Chip Enable High to Output Hi-Z G= VIL 0 30 0 45 0 45 ns tGHQZ (1) tDF Output Enable High to Output Hi-Z E= VIL 0 30 0 30 0 30 ns tAXQX tOH Address Transition to Output Transition E=VIL,G = VIL 00 0 ns Note: 1. Sampled only, not 100% tested Table 9A. Read Only Mode AC Characteristics (TA = 0 to 70 °C, –40 to 85 °C or –40 to 125 °C; 0V ≤ VPP ≤ 6.5V) 7/23 M28F101 |
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