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M28F101 数据表(PDF) 1 Page - STMicroelectronics |
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M28F101 数据表(HTML) 1 Page - STMicroelectronics |
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1 / 23 page ![]() M28F101 1 Mb (128K x 8, Chip Erase) FLASH MEMORY April 1997 1/23 AI00666B 17 A0-A16 W DQ0-DQ7 VPP VCC M28F101 G E VSS 8 Figure 1. Logic Diagram 5V ±10% SUPPLY VOLTAGE 12V PROGRAMMING VOLTAGE FAST ACCESS TIME: 70ns BYTE PROGRAMING TIME: 10 µs typical ELECTRICAL CHIP ERASE in 1s RANGE LOW POWER CONSUMPTION – Stand-by Current: 100 µA max 10,000 ERASE/PROGRAM CYCLES INTEGRATED ERASE/PROGRAM-STOP TIMER OTP COMPATIBLE PACKAGES and PINOUTS ELECTRONIC SIGNATURE – Manufacturer Code: 20h – Device Code: 07h DESCRIPTION The M28F101 FLASH Memory is a non-volatile memory which may be erased electrically at the chip level and programmed byte-by-byte. It is or- ganised as 128K bytes of 8 bits. It uses a command register architecture to select the operating modes and thus provides a simple microprocessor inter- face. The M28F101 FLASH Memory is suitable for applications where the memory has to be repro- grammed in the equipment. The access time of 70ns makes the device suitable for use in high speed microprocessor systems. A0-A16 Address Inputs DQ0-DQ7 Data Inputs / Outputs E Chip Enable G Output Enable W Write Enable VPP Program Supply VCC Supply Voltage VSS Ground Table 1. Signal Names PLCC32 (K) 32 1 PDIP32 (P) TSOP32 (N) 8 x 20 mm |
类似零件编号 - M28F101 |
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类似说明 - M28F101 |
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