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M28F101 数据表(PDF) 5 Page - STMicroelectronics

部件名 M28F101
功能描述  1 Mb 128K x 8, Chip Erase FLASH MEMORY
PDF  23 Pages
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制造商  STMICROELECTRONICS [STMicroelectronics]
网页  http://www.st.com
标志 STMICROELECTRONICS - STMicroelectronics

M28F101 数据表(HTML) 5 Page - STMicroelectronics

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AI01275
3V
SRAM Interface
0V
1.5V
2.4V
EPROM Interface
0.45V
2.0V
0.8V
Figure 3. AC Testing Input Output Waveform
AI01276
1.3V
OUT
CL = 30pF or 100pF
CL = 30pF for SRAM Interface
CL = 100pF for EPROM Interface
CL includes JIG capacitance
3.3k
1N914
DEVICE
UNDER
TEST
Figure 4. AC Testing Load Circuit
SRAM Interface Levels
EPROM Interface Levels
Input Rise and Fall Times
≤ 10ns
≤ 10ns
Input Pulse Voltages
0 to 3V
0.45V to 2.4V
Input and Output Timing Ref. Voltages
1.5V
0.8V and 2V
Table 6. AC Measurement Conditions
Symbol
Parameter
Test Condition
Min
Max
Unit
CIN
Input Capacitance
VIN =0V
6
pF
COUT
Output Capacitance
VOUT =0V
12
pF
Note: 1. Sampled only, not 100% test.ed
Table 7. Capacitance (1) (TA =25
°C, f = 1 MHz )
A write to the command register is made by bringing
W Low while E is Low. The falling edge of W latches
Addresses, while the rising edge latches Data,
which are used for those commands that require
address inputs, command input or provide data
output.
The supply voltage VCC and the program voltage
VPP can be applied in any order. When the device
is powered up or when VPP is
≤ 6.5V the contents
of the command register defaults to 00h, thus
automatically setting-up Read operations. In addi-
tion a specific command may be used to set the
command register to 00h for reading the memory.
The system designer may chose to provide a con-
stant high VPP and use the register commands for
all operations, or to switch the VPP from low to high
only when needing to erase or program the mem-
ory. All command register access is inhibited when
VCC falls below the Erase/Write Lockout Voltage
(VLKO) of 2.5V.
If the device is deselected during Erasure, Pro-
gramming or Verification it will draw active supply
currents until the operations are terminated.
The device is protected against stress caused by
long erase or program times. If the end of Erase or
Programming operations are not terminated by a
Verify cycle within a maximum time permitted, an
internal stop timer automatically stops the opera-
tion. The device remains in an inactive state, ready
to start a Verify or Reset Mode operation.
READ/WRITE MODES (cont’d)
5/23
M28F101



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