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M28F101 数据表(PDF) 10 Page - STMicroelectronics

部件名 M28F101
功能描述  1 Mb 128K x 8, Chip Erase FLASH MEMORY
PDF  23 Pages
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制造商  STMICROELECTRONICS [STMicroelectronics]
网页  http://www.st.com
标志 STMICROELECTRONICS - STMicroelectronics

M28F101 数据表(HTML) 10 Page - STMicroelectronics

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AI00673
tWHGL
tVPHEL
00000h-00001h
tELQV
tEHQZ
tAVQV
A0-A16
E
G
DQ0-DQ7
DATA OUT
COMMAND
VPP
W
tAXQX
tGHQZ
tGLQV
READ
MANUFACTURER
OR DEVICE
READ ELECTRONIC
SIGNATURE SET-UP
tWLWH
tWHDX
tDVWH
tGHWL
tELWL
tWHEH
Figure 7. Electronic Signature Command Waveforms
As the Erase algorithm flow chart shows, when the
data read during Erase Verify is not FFh, another
Erase operation is performed and verification con-
tinues from the address of the last verifiedbyte. The
command is terminated by writing another valid
command to the command register (for example
Program or Reset).
Program and Program Verify Modes. The Pro-
gram Mode is set-up by writing 40h to the command
register. This is followed by a second write cycle
which latches the address and data of the byte to
be programmed. The rising edge of W during this
secind cycle starts the programming operation.
Programming is followed by a Program Verify of the
data written.
Program Verify Mode is set-up by writing C0h to the
command register. The rising edge of W during the
set-up of the Program Verify Mode stops the Pro-
gramming operation. The following read cycle, of
the address already latched during programming,
is made with an internally generated margin volt-
age applied,reading valid data indicates that all bits
have been programmed.
Reset Mode. This command is used to safely abort
Erase or Program Modes. The Reset Mode is
set-up and performed by writing FFh two times to
the command register. The command should be
followed by writing a valid command to the the
command register (for example Read).
READ/WRITE MODES (cont’d)
10/23
M28F101



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