Symbol

Parameter

Value

Unit

Ambient Operating Temperature

–40 to 125

°C

Storage Temperature

–65 to 150

°C

Input or Output Voltages

–0.6 to 7

V

Supply Voltage

–0.6 to 7

V

A9 Voltage

–0.6 to 13.5

V

Program Supply Voltage, during Erase

or Programming

–0.6 to 14

V

Note: Except for the rating ”Operating Temperature Range”, stresses above those listed in the Table ”Absolute Maximum Ratings” may

cause permanent damage to the device. These are stress ratings only and operation of the device at these or any other conditions above

those indicated in the Operating sections of this specification is not implied. Exposure to Absolute Maximum Rating conditions for extended

periods may affect device reliability. Refer also to the SGS-THOMSON SURE Program and other relevant quality documents.

Table 2. Absolute Maximum Ratings

DEVICE OPERATION

The M28F101 FLASH Memory employs a technol-

ogy similar to a 1 Megabit EPROM but adds to the

device functionality by providing electrical erasure

and programming. These functions are managed

by a command register. The functions that are

addressed via the command register depend on

command register is disabled and M28F101 func-

tions as a read only memory providing operating

modes similar to an EPROM (Read, Output Dis-

able, Electronic Signature Read and Standby).

is enabled and this provides, in addition, Erase and

Program operations.

≤ 6.5V

For all Read Only Modes, except Standby Mode,

the Write Enable input W should be High. In the

Standby Mode this input is don’t care.

Read Mode. The M28F101 has two enable inputs,

E and G, both of which must be Low in order to

output data from the memory. The Chip Enable (E)

is the power control and should be used for device

selection. Output Enable (G) is the output control

and should be used to gate data on to the output,

independant of the device selection.

Standby Mode. In the Standby Mode the maxi-

mum supply current is reduced. The device is

placed in the Standby Mode by applying a High to

the Chip Enable (E) input. When in the Standby

Mode the outputs are in a high impedance state,

independant of the Output Enable (G) input.

Output Disable Mode. When the Output Enable

(G) is High the outputs are in a high impedance

state.

Electronic Signature Mode. This mode allows the

read out of two binary codes from the device which

identify the manufacturer and device type. This

mode is intended for use by programming equip-

ment to automatically select the correct erase and

programming algorithms. The Electronic Signature

Mode is active when a high voltage (11.5V to 13V)

is applied to address line A9 with E and G Low. With

A0 Low the output data is the manufacturer code,

when A0 is High the output is the device type code.

All other address lines should be maintained Low

while reading the codes. The electronic signature

may also be accessed in Read/Write modes.

READ/WRITE MODES, 11.4V

may be performed. These are defined by the con-

tents of an internal command register. Commands

may be written to this register to set-up and exe-

cute, Erase, Erase Verify, Program, Program Verify

and Reset modes. Each of these modes needs 2

cycles. Eah mode starts with a write operation to

set-up the command, this is followed by either read

or write operations. The device expects the first

cycle to be a write operation and does not corrupt

data at any location in the memory. Read mode is

set-up with one cycle only and may be followed by

any number of read operations to output data.

Electronic Signature Read mode is set-up with one

cycle and followed by a read cycle to output the

manufacturer or device codes.

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M28F101