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SERCON816 数据表(PDF) 15 Page - STMicroelectronics |
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SERCON816 数据表(HTML) 15 Page - STMicroelectronics |
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15 / 23 page ![]() 15/23 SERCON816 3.5.7 Write Access to DUAL Port RAM Figure 11. Write Access to DUAL Port RAM Notes: 1. Setup time input signals to falling edge WRN (Intel mode) or RDN (Motorola mode with low active strobe) or rising edge RDN (Mo- torola mode with high active strobe) Symbol Parameter Min. Typ. Max. Unit tASU Setup time A11-0, (Note 1) 10 ns Setup time MCSN0-1, if both signals are activated simultaneously. (Note 1) 5ns Setup time MCSN0-1, if one of these both signals is activated 10 ns earlier. (Note 1) 0 Setup time BHEN, WRN (only Motorola mode), (Note 1) 0 ns tAHD hold time A11-0, BHEN, MCSN0-1, WRN (only Motorola mode) to rising edge of WRN (Intel mode) or RDN (Motorola mode with low active strobe) or falling edge RDN (Motorola mode with high active strobe) 0ns tMWRW Pulse width WRN or RDN 20 ns tDSU Setup time D15-0 to end of write access 10 ns tDHD Hold time D15-0 after end of write access 5 ns tMBSY Delay WRN or RDN (begin of write access) to BUSYN low 15 ns tMBHWH Setup time BUSYN high to end of write access 15 ns tWR1 WRN and RDN high after end of write access 15 ns A10-0, BHEN, MCSN0-1, WRN (Motorola mode) WRN (Intel mode) RDN (Motorola mode) D15-0 BUSYN tMBSY tMBHWH tMWRW tDSU tDHD tWR1 tASU tAHD |
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