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ST72141K 数据表(PDF) 120 Page - STMicroelectronics |
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ST72141K 数据表(HTML) 120 Page - STMicroelectronics |
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120 / 132 page ![]() ST72141K 120/132 10.5 I/O PORT CHARACTERISTICS Recommended operating conditions with TA=-40 to +125 oC and 4.5V<V DD-VSS<5.5V unless otherwise specified. Notes: 1) Unless otherwise specified, typical data is based on TA=25°C and VDD-VSS=5V. This data is provided only as design guidelines and is not tested. 2) Data based on design simulations and/or technology characteristics, not tested in production. 3) Hysteresis voltage between Schmitt trigger switching levels. Based on characterisation results, not tested. 4) Data based on characterization results, not tested in production. 5) Positive injection (IINJ+) The IINJ+ is performed through protection diodes insulated from the substrate of the die. The true open-drain pins do not accept positive injection. In this case the maximum voltage rating must be respected. 6) ADC accuracy reduced by negative injection (IINJ- ) The IINJ- is performed through protection diodes NOT INSULATED from the substrate of the die. The drawback is a small leakage (a few µA) induced inside the die when a negative injection is performed. This leakage is tolerated by the digital structure, but it acts on the analog line depending on the impedance versus a leakage current of a few µA (if the MCU has an AD converter). The effect depends on the pin which is submitted to the injection. Of course, external digital signals applied to the component must have a maximum impedance close to 50K Ω. Location of the negative current injection: - Pins with analog input capability are the most sensitive. IINJ- maximum is 0.8 mA (assuming that the impedance of the analog voltage is lower than 25K Ω) - Pure digital pins can tolerate 1.6mA. In addition, the best choice is to inject the current as far as possible from the analog input pins. 7) When several inputs are submitted to a current injection, the maximum IINJ is the sum of the positive (or negative) cur- rents (instantaneous values). These results are based on characterisation with IINJ maximum current injection on four I/ O port pins of the device. 8) To generate an external interrupt, a minimum pulse width has to be applied on an I/O port pin configured as an external interrupt source. I/O PORT PINS Symbol Parameter Conditions Min Typ 1) Max Unit VIL Input low level voltage 2) 0.3xVDD V VIH Input high level voltage 2) 0.7xVDD VHYS Schmitt trigger voltage hysteresis 3) 400 mV VOL Output low level voltage for standard I/O port pins I=-5mA 1.3 V I=-2mA 0.5 Output low level voltage for high sink I/O port pins I=-20mA 1.3 I=-8mA 0.5 VOH Output high level voltage I=-5mA VDD-2.0 I=-2mA VDD-0.8 RPU Pull-up equivalent resistor VIN > VIH VIN < VIL 20 50 40 120 80 240 k Ω IL Input leakage current VSS<VPIN<VDD 1 µA ISV Static current consumption 2) Floating input mode 200 IPINJ Single pin injected current Positive 5): VEXT>VDD 5 mA Negative 6): VEXT<VSS -5 IINJ Total injected current 7) (sum of all I/O and control pins) Positive: VEXT>VDD 20 Negative: VEXT<VSS 20 tOHL Output high to low level fall time Cl=50pF 14.8 4) 25 45.6 4) ns tOLH Output low to high rise time 14.4 4) 25 45.9 4) tITEXT External interrupt pulse time 8) 1tCPU |
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