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HD6417618 数据表(PDF) 590 Page - Renesas Technology Corp |
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HD6417618 数据表(HTML) 590 Page - Renesas Technology Corp |
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590 / 646 page ![]() Section 21 Electrical Characteristics Rev. 6.00 Jun. 12, 2007 Page 558 of 610 REJ09B0131-0600 Th T1 Twx T2 Tf t AD1 t CSD1 t AD1 t CSD1 t BSD t BSD t WTH t WTS t WTH t WTS t WDH1 t WDD1 CKIO An CSn RD/ WR RD WEn RD/ WR BS WAIT t RDH1 t RDS1 t RWD t RWD t RWD t RWD2 t RWD2 t RWD t RSD t RSD t WED2 t WED2 D15 to D0 D15 to D0 Read Write Figure 21.15 Byte Control SRAM Timing: SW = 1 Cycle, HW = 1 Cycle, One Asynchronous External Wait Cycle, CSnWCR.BAS = 1 (WE-Controlled Write Cycle) |
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