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ST7263BEx 数据表(PDF) 148 Page - STMicroelectronics |
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ST7263BEx 数据表(HTML) 148 Page - STMicroelectronics |
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148 / 186 page ![]() Electrical characteristics ST7263Bxx 148/186 Doc ID 7516 Rev 8 13.7.2 Electromagnetic Interference (EMI) Based on a simple application running on the product (toggling 2 LEDs through the I/O ports), the product is monitored in terms of emission. This emission test is in line with the norm SAE J 1752/3 which specifies the board and the loading of each pin. 13.7.3 Absolute maximum ratings (electrical sensitivity) Based on three different tests (ESD, and LU) using specific measurement methods, the product is stressed in order to determine its performance in terms of electrical sensitivity. For more details, refer to the application note AN1181. Electrostatic discharge (ESD) Electrostatic discharges (a positive then a negative pulse separated by 1 second) are applied to the pins of each sample according to each pin combination. The sample size depends on the number of supply pins in the device (3 parts*(n+1) supply pin). This test conforms to the JESD22-A114A/A115A standard. Static latchup (LU) 3 complementary static tests are required on 10 parts to assess the latchup performance. A supply overvoltage (applied to each power supply pin) and a current injection (applied to each input, output and configurable I/O pin) are performed on each sample. This test conforms to the EIA/JESD 78 IC latch-up standard. For more details, refer to the application note AN1181. Table 67. EMI characteristics Symbol Parameter Conditions Monitored frequency band Max vs. [fOSC/fCPU] Unit 16/8 MHz SEMI Peak level(1) 1. Data based on characterization results, not tested in production. VDD=5V, TA=+25 °C, SDIP32 package conforming to SAE J 1752/3(2) 2. Refer to application note AN1709 for data on other package types. 0.1 MHz to 30 MHz 36 dBµV 30 MHz to 130 MHz 39 130 MHz to 1GHz 26 SAE EMI Level 3.5 - Table 68. Absolute maximum ratings Symbol Ratings Conditions Maximum value(1) 1. Data based on characterization results, not tested in production. Unit VESD(HBM) Electrostatic discharge voltage (human body model) TA=+25 °C 2000 V |
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