AT45DB321D datasheet(9/57 Pages) ATMEL

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3597N–DFLASH–04/09

AT45DB321D

7.4

Page Erase

The Page Erase command can be used to individually erase any page in the main memory array

allowing the Buffer to Main Memory Page Program to be utilized at a later time. To perform a

page erase in the DataFlash standard page size (528 bytes), an opcode of 81H must be loaded

into the device, followed by three address bytes comprised of 1 don’t care bit, 13 page address

bits (PA12 - PA0) that specify the page in the main memory to be erased and 10 don’t care bits.

To perform a page erase in the binary page size (512 bytes), the opcode 81H must be loaded

into the device, followed by three address bytes consist of 2 don’t care bits, 13 page address bits

(A21 - A9) that specify the page in the main memory to be erased and 9 don’t care bits. When a

low-to-high transition occurs on the CS pin, the part will erase the selected page (the erased

state is a logical 1). The erase operation is internally self-timed and should take place in a maxi-

mum time of tPE. During this time, the status register and the RDY/BUSY pin will indicate that the

part is busy.

7.5

Block Erase

A block of eight pages can be erased at one time. This command is useful when large amounts

of data has to be written into the device. This will avoid using multiple Page Erase Commands.

To perform a block erase for the DataFlash standard page size (528 bytes), an opcode of 50H

must be loaded into the device, followed by three address bytes comprised of 1 don’t care bit,

10 page address bits (PA12 -PA3) and 13 don’t care bits. The 10 page address bits are used to

specify which block of eight pages is to be erased. To perform a block erase for the binary page

size (512 bytes), the opcode 50H must be loaded into the device, followed by three address

bytes consisting of 2 don’t care bits, 10 page address bits (A21 - A12) and 12 don’t care bits.

The 10 page address bits are used to specify which block of eight pages is to be erased. When

a low-to-high transition occurs on the CS pin, the part will erase the selected block of eight

pages. The erase operation is internally self-timed and should take place in a maximum time of

tBE. During this time, the status register and the RDY/BUSY pin will indicate that the part is busy.

Table 7-1.

Block Erase Addressing

PA12/

A21

PA11/

A20

PA10/

A19

PA9/

A18

PA8/

A17

PA7/

A16

PA6/

A15

PA5/

A14

PA4/

A13

PA3/

A12

PA2/

A11

PA1/

A10

PA0/

Block

0000

000

0000

001

0000

010

0000

011

•

1111

100

1020

1111

101

1021

1111

110

1022

1111

111

1023

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