AT45DB321D datasheet(28/57 Pages) ATMEL

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3597N–DFLASH–04/09

AT45DB321D

Group D commands consist of:

1. Erase Sector Protection Register

2. Program Sector Protection Register

3. Sector Lockdown

4. Program Security Register

If a Group A command is in progress (not fully completed), then another command in Group A,

B, C, or D should not be started. However, during the internally self-timed portion of Group B

commands, any command in Group C can be executed. The Group B commands using buffer 1

should use Group C commands using buffer 2 and vice versa. Finally, during the internally self-

timed portion of a Group D command, only the Status Register Read command should be

executed.

15. Command Tables

Table 15-1.

Read Commands

Command

Opcode

Main Memory Page Read

D2H

Continuous Array Read (Legacy Command)

E8H

Continuous Array Read (Low Frequency)

03H

Continuous Array Read (High Frequency)

0BH

Buffer 1 Read (Low Frequency)

D1H

Buffer 2 Read (Low Frequency)

D3H

Buffer 1 Read

D4H

Buffer 2 Read

D6H

Table 15-2.

Program and Erase Commands

Command

Opcode

Buffer 1 Write

84H

Buffer 2 Write

87H

Buffer 1 to Main Memory Page Program with Built-in Erase

83H

Buffer 2 to Main Memory Page Program with Built-in Erase

86H

Buffer 1 to Main Memory Page Program without Built-in Erase

88H

Buffer 2 to Main Memory Page Program without Built-in Erase

89H

Page Erase

81H

Block Erase

50H

Sector Erase

7CH

Chip Erase

C7H, 94H, 80H, 9AH

Main Memory Page Program Through Buffer 1

82H

Main Memory Page Program Through Buffer 2

85H

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