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AT45DB321D 数据表(PDF) 35 Page - ATMEL Corporation |
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AT45DB321D 数据表(HTML) 35 Page - ATMEL Corporation |
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35 / 57 page ![]() 35 3597N–DFLASH–04/09 AT45DB321D Table 18-4. AC Characteristics – RapidS/Serial Interface Symbol Parameter AT45DB321D Min Typ Max Units fSCK SCK Frequency 66 MHz fCAR1 SCK Frequency for Continuous Array Read 66 MHz fCAR2 SCK Frequency for Continuous Array Read (Low Frequency) 33 MHz tWH SCK High Time 6.8 ns tWL SCK Low Time 6.8 ns tSCKR (1) SCK Rise Time, Peak-to-Peak (Slew Rate) 0.1 V/ns tSCKF(1) SCK Fall Time, Peak-to-Peak (Slew Rate) 0.1 V/ns tCS Minimum CS High Time 50 ns tCSS CS Setup Time 5 ns tCSH CS Hold Time 5 ns tCSB CS High to RDY/BUSY Low 100 ns tSU Data In Setup Time 2 ns tH Data In Hold Time 3 ns tHO Output Hold Time 0 ns tDIS Output Disable Time 27 35 ns tV Output Valid 6ns tWPE WP Low to Protection Enabled 1 µs tWPD WP High to Protection Disabled 1 µs tEDPD CS High to Deep Power-down Mode 3 µs tRDPD CS High to Standby Mode 35 µs tXFR Page to Buffer Transfer Time 200 µs tcomp Page to Buffer Compare Time 200 µs tEP Page Erase and Programming Time (512/528 bytes) 17 40 ms tP Page Programming Time (512/528 bytes) 3 6 ms tPE Page Erase Time (512/528 bytes) 15 35 ms tBE Block Erase Time (4,096/4,224 bytes) 45 100 ms tCE Chip Erase Time TBD TBD s tSE Sector Erase Time (262,144/270,336 bytes) 1.6 5 s tRST RESET Pulse Width 10 µs tREC RESET Recovery Time 1 µs |
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