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TDF8591TH 数据表(PDF) 23 Page - NXP Semiconductors |
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TDF8591TH 数据表(HTML) 23 Page - NXP Semiconductors |
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23 / 34 page ![]() TDF8591TH_1 © NXP B.V. 2008. All rights reserved. Product data sheet Rev. 01 — 5 March 2008 23 of 34 NXP Semiconductors TDF8591TH 2 × 100 W SE (4 Ω) or 1 × 310 W BTL (4 Ω) class-D amplifier Po = 1 W; C = 680 nF; L = 22 µH. (1) VP = ±14 V. (2) VP = ±18 V. (3) VP = ±27 V. (4) VP = ±29 V. Po = 1 W; C = 680 nF; L = 22 µH. (1) VP = ±14 V. (2) VP = ±18 V. (3) VP = ±27 V. (4) VP = ±29 V. Fig 17. Total harmonic distortion as a function of frequency, BTL application with 2 Ω load Fig 18. Total harmonic distortion as a function of frequency, BTL application with 4 Ω load 001aah203 10−1 10−2 1 THD (%) 10−3 (2) (3) (4) (1) f (kHz) 10−2 102 10 10−1 1 001aah204 10−1 10−2 1 THD (%) 10−3 (2) (3) (4) (1) f (kHz) 10−2 102 10 10−1 1 Po = 1 W; C = 680 nF; L = 22 µH. (1) VP = ±14 V. (2) VP = ±18 V. (3) VP = ±27 V. (4) VP = ±29 V. Fig 19. Total harmonic distortion as a function of frequency, BTL application with 8 Ω load 001aah205 10−1 10−2 1 THD (%) 10−3 (2) (3) (4) (1) f (kHz) 10−2 102 10 10−1 1 |
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